
Allicdata Part #: | 1N5615-ND |
Manufacturer Part#: |
1N5615 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 200V 1A AXIAL |
More Detail: | Diode Standard 200V 1A Through Hole |
DataSheet: | ![]() |
Quantity: | 82 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.6V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 500nA @ 200V |
Capacitance @ Vr, F: | 45pF @ 12V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | A, Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
Description
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1N5615 – Application Field & Working Principle
Introduction:
1N5615 is a high voltage, low power, single-rectifier diode. It is also known as a Standard Rectifier Diode which offers a full-wave rectification and an ultra-fast switching speed. It is mainly used in AC and DC circuits and is suitable for high-frequency switching applications. This diode is configured in surface mount packages and is ideal for use in high speed electronic equipment.Application:
1N5615 is mainly used in power converters, high frequency circuits, AC/DC circuits, high voltage lines, and rectifiers. This diode is commonly employed as rectifiers for in motor controllers, power supplies, switching mode, solar panel array, as well as in general purpose circuits. Back-EMF protection, voltage limiting circuits and high frequency protection are some of the applications of this diode.Features:
The features of 1N5615 include a maximum rating of 300V and a maximum repetitive forward current of 1A. It can operate over a wide range of temperature range (from −55°C to +150°C). It is available with power dissipation up to 1W. It offers good thermal properties, low power consumption and a high rectification efficiency.Working Principle:
1N5615 Diode works on the principle of PN junction. When a PN junction is formed between two materials, a rectifier action occurs. This feature allows current to flow in one direction through the diode. When a forward potential is applied to the diode, the anode is then at a higher potential than the cathode, and a rectifier action occurs. The amount of current that can flow through the diode is determined by its size (physical size and electrode area) and the magnitude of the forward bias voltage.Advantages:
1N5615 diode has a wide range of advantages for applications that require efficient power utilization. It offers high-speed switching, low forward voltage drop, low power consumption and high rectification efficiency. Its low forward voltage drop allows it to be used in circuits that require high frequency switching. It is also widely used in circuits that allow high frequency protection. It has a low power consumption and offers good thermal properties. This diode has a wide range of features making it a good choice for high voltage rectification applications.Conclusion:
1N5615 diode is a high voltage, low power, single-rectifier diode. It is mainly used in power converters, high frequency circuits, AC/DC circuits, high voltage lines, and rectifiers. It offers features such as a maximum rating of 300V, maximum repetitive forward current of 1A, and power dissipation up to 1W. This diode is ideal for use in fast electronic equipment and offers low power consumption and high rectification efficiency. It is a good choice for high voltage rectification applications.The specific data is subject to PDF, and the above content is for reference
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