
Allicdata Part #: | 1N5611-ND |
Manufacturer Part#: |
1N5611 |
Price: | $ 38.79 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 35.26480 |
Series: | * |
Part Status: | Active |
RoHS Status: | RoHS non-compliant |
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1N5611 is a unidirectional breakdown voltage TVS diode which is rapid and effective for wave suppression and voltage clamping. It is commonly employed for AC/DC power supply line surge protection and low voltage applications that require high noise immunity and low capacitance. The many features and advantages of the 1N5611 make it a widely used device in the electronics world.
The 1N5611 is composed of two components, the diode and the metal-oxide varistor (MOV). The diode provides protection from voltages above a certain level, while the MOV limits the energy gradient during a surge to a safe level. Combined, these components provide protection from surges of high-energy transients.
In operation, the 1N5611 acts as an open circuit until the voltage from an inrush current rises above the predetermined breakdown voltage level set by the series circuit. At the breakdown voltage, the diode will break down and the MOV will start to conduct. The MOV then clamps the voltage at a safe level while dissipating most of the energy generated from the surge.
The 1N5611 is suitable for many DC and AC power supply protection applications, as well as general lightning protection. Its unidirectional breakdown voltage rating is typically 15V with an operating temperature range from -55 to 125°C. The 1N5611 is particularly beneficial in lightning surge protection, motor control relay protection, power line surge protection, and DC/DC converter protection.
Due to its low capacitance, the 1N5611 has extremely high immunity to pulse transients, as compared to other TVS diodes. It is also capable of reducing peak-current amplitude to prevent any damage to external components. An integrated thermal fuse allows the 1N5611 to self-protect in case of an intense overvoltage situation.
In order to allow further excellent protection, a multilayer construction and a careful component selection can be used to build the ideal surge protection solution. Combining individual 1N5611 diodes provides enhanced ESD protection, which is essential in protecting electronics from surges. Furthermore, multiple 1N5611 components offer increased versatility, allowing the user to make adjustments to protections needs based on the requirements of the application.
The 1N5611 provides reliable protection in a variety of electronic products, from medical equipment to industrial machinery. Its fast response time and low dynamic resistance provide superior protection from high-energy transients, making the 1N5611 an invaluable component in any application which requires surge protection.
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Part Number | Manufacturer | Price | Quantity | Description |
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1N5631A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 7.02V 12.1V DO1... |
1N5664A | Microsemi Co... | 11.88 $ | 35 | TVS DIODE 154V 246V DO13 |
1N5624GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5627GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5646A | Microsemi Co... | 15.37 $ | 100 | TVS DIODE 30.8V 49.9V DO1... |
1N5656 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5637 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
1N5630 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5659 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5611 | Microsemi Co... | 38.79 $ | 1000 | TVS DIODE |
1N5638 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5618GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5660A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 111V 179V DO13 |
1N5615US | Microsemi Co... | 6.31 $ | 430 | DIODE GEN PURP 200V 1A D5... |
1N5640A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 17.1V 27.7V DO1... |
1N5619 | Microsemi Co... | -- | 177 | DIODE GEN PURP 600V 1A AX... |
1N5623 | Microsemi Co... | 4.82 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N5659A | Microsemi Co... | -- | 131 | TVS DIODE 102V 165V DO13 |
1N5649A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 40.2V 64.8V DO1... |
1N5662A | Microsemi Co... | 15.37 $ | 74 | TVS DIODE 136V 219V DO13 |
1N5640 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5649 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5650A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 43.6V 70.1V DO1... |
1N5641 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5627GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5638A | Microsemi Co... | -- | 1000 | TVS DIODE 13.6V 22.5V DO1... |
1N5619GP-E3/73 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5626GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5665 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5648A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 36.8V 59.3V DO1... |
1N5620GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5650 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5625GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5622GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N5644 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5620 | Microsemi Co... | 4.73 $ | 161 | DIODE GEN PURP 800V 1A AX... |
1N5616C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 400V 1A AX... |
1N5633A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 8.55V 14.5V DO1... |
1N5617 | Microsemi Co... | -- | 181 | DIODE GEN PURP 400V 1A AX... |
TVS DIODE 31V 56.4V DO214AB

TVS DIODE 8.5V 13.5V DO219AB

TVS DIODE 350V 690V CASE 5A

TVS DIODE 170V 334V CASE 5A

TVS DIODE 7.02V 12.1V T-18

TVS DIODE 78V 126V DO204AL
