1N5615US Allicdata Electronics
Allicdata Part #:

1N5615US-ND

Manufacturer Part#:

1N5615US

Price: $ 6.31
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 200V 1A D5A
More Detail: Diode Standard 200V 1A Surface Mount D-5A
DataSheet: 1N5615US datasheet1N5615US Datasheet/PDF
Quantity: 430
1 +: $ 5.73930
10 +: $ 5.16474
100 +: $ 4.24652
500 +: $ 3.55788
1000 +: $ 3.09880
Stock 430Can Ship Immediately
$ 6.31
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 1N5615US is a single rectifier diode, which is a type of diode that allows electric current to flow in only one direction and blocks in the reverse direction. It is often used in various electrical applications due to its power efficiency and performance. This article aims to discuss the application field and working principle of the 1N5615US.

Application Field of 1N5615US

The 1N5615US is a versatile component and it is suitable for use in a wide range of application fields. It can be used in automotive electronics and household appliances, like TVs and computers. It can also be used in various types of electrical circuits, such as low-frequency oscillators and rectifiers, for protection against reverse current. Additionally, it can be used for controlling electromagnetic interference generated by electrical equipment, as well as for frequency conversion.

Working Principle of 1N5615US

The 1N5615US is a rectifier diode, which means it is designed to function as a precise one-way valve for electric current. Its internal structure consists of two P-type and N-type silicon semiconductor materials, which are joined together and form a PN junction. When a direct current (DC) voltage is applied across the anode and cathode, the electric current is allowed to flow only in one direction, while the flow in the opposite direction is blocked.

Furthermore, when the diode is in the reverse biased condition, there is no current flowing through it. This is because Holes and Electrons are unable to pass through the PN junction and the diode is isolated from the rest of the circuit. This feature allows the 1N5615US to protect other electronic components from damage, as it prevents current from flowing back into the circuit.

Conclusion

In conclusion, the 1N5615US is a single rectifier diode, which has many practical applications in a variety of fields. Its working principle is based on the PN junction structure, which allows current to pass through the diode in only one direction and blocks the opposite direction, providing protection from reverse currents. Therefore, the 1N5615US is a reliable component, which is suitable for use in many different types of electrical circuits.

The specific data is subject to PDF, and the above content is for reference

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