Allicdata Part #: | 1N5615US-ND |
Manufacturer Part#: |
1N5615US |
Price: | $ 6.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 200V 1A D5A |
More Detail: | Diode Standard 200V 1A Surface Mount D-5A |
DataSheet: | 1N5615US Datasheet/PDF |
Quantity: | 430 |
1 +: | $ 5.73930 |
10 +: | $ 5.16474 |
100 +: | $ 4.24652 |
500 +: | $ 3.55788 |
1000 +: | $ 3.09880 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.6V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 500nA @ 200V |
Capacitance @ Vr, F: | 45pF @ 12V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, A |
Supplier Device Package: | D-5A |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The 1N5615US is a single rectifier diode, which is a type of diode that allows electric current to flow in only one direction and blocks in the reverse direction. It is often used in various electrical applications due to its power efficiency and performance. This article aims to discuss the application field and working principle of the 1N5615US.
Application Field of 1N5615US
The 1N5615US is a versatile component and it is suitable for use in a wide range of application fields. It can be used in automotive electronics and household appliances, like TVs and computers. It can also be used in various types of electrical circuits, such as low-frequency oscillators and rectifiers, for protection against reverse current. Additionally, it can be used for controlling electromagnetic interference generated by electrical equipment, as well as for frequency conversion.
Working Principle of 1N5615US
The 1N5615US is a rectifier diode, which means it is designed to function as a precise one-way valve for electric current. Its internal structure consists of two P-type and N-type silicon semiconductor materials, which are joined together and form a PN junction. When a direct current (DC) voltage is applied across the anode and cathode, the electric current is allowed to flow only in one direction, while the flow in the opposite direction is blocked.
Furthermore, when the diode is in the reverse biased condition, there is no current flowing through it. This is because Holes and Electrons are unable to pass through the PN junction and the diode is isolated from the rest of the circuit. This feature allows the 1N5615US to protect other electronic components from damage, as it prevents current from flowing back into the circuit.
Conclusion
In conclusion, the 1N5615US is a single rectifier diode, which has many practical applications in a variety of fields. Its working principle is based on the PN junction structure, which allows current to pass through the diode in only one direction and blocks the opposite direction, providing protection from reverse currents. Therefore, the 1N5615US is a reliable component, which is suitable for use in many different types of electrical circuits.
The specific data is subject to PDF, and the above content is for reference
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1N5618US | Microsemi Co... | 5.95 $ | 481 | DIODE GEN PURP 600V 1A D5... |
1N5615US | Microsemi Co... | 6.31 $ | 430 | DIODE GEN PURP 200V 1A D5... |
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1N5624-TR | Vishay Semic... | 0.25 $ | 7500 | DIODE AVALANCHE 200V 3A S... |
1N5620 | Microsemi Co... | 4.73 $ | 161 | DIODE GEN PURP 800V 1A AX... |
1N5616 | Microsemi Co... | 4.59 $ | 270 | DIODE GEN PURP 400V 1A AX... |
1N5617GP-E3/54 | Vishay Semic... | 0.08 $ | 4000 | DIODE GEN PURP 400V 1A DO... |
1N5619GP-E3/54 | Vishay Semic... | 0.08 $ | 8000 | DIODE GEN PURP 600V 1A DO... |
1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
1N5626-TR | Vishay Semic... | -- | 5000 | DIODE AVALANCHE 600V 3A S... |
1N5627-TR | Vishay Semic... | 0.27 $ | 1000 | DIODE AVALANCHE 800V 3A S... |
1N5619 | Microsemi Co... | -- | 177 | DIODE GEN PURP 600V 1A AX... |
1N5616US | Microsemi Co... | 5.95 $ | 191 | DIODE GEN PURP 400V 1A D5... |
1N5615GP-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N5617C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 400V 2A AX... |
1N5622C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N5615 | Microsemi Co... | -- | 82 | DIODE GEN PURP 200V 1A AX... |
1N5624-TAP | Vishay Semic... | 0.22 $ | 1000 | DIODE AVALANCHE 200V 3A S... |
1N5626-TAP | Vishay Semic... | 0.26 $ | 1000 | DIODE AVALANCHE 600V 3A S... |
1N5625-TR | Vishay Semic... | 0.26 $ | 1000 | DIODE AVALANCHE 400V 3A S... |
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