Allicdata Part #: | 1N5637AMS-ND |
Manufacturer Part#: |
1N5637A |
Price: | $ 16.35 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 12.8V 21.2V DO13 |
More Detail: | N/A |
DataSheet: | 1N5637A Datasheet/PDF |
Quantity: | 76 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | $ 14.85540 |
10 +: | $ 13.74280 |
25 +: | $ 12.62870 |
100 +: | $ 11.73730 |
250 +: | $ 10.77150 |
Voltage - Clamping (Max) @ Ipp: | 21.2V |
Supplier Device Package: | DO-13 |
Package / Case: | DO-13 |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 71A |
Series: | -- |
Voltage - Breakdown (Min): | 14.3V |
Voltage - Reverse Standoff (Typ): | 12.8V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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1N5637A TVS Diodes
A transient-voltage-suppression (TVS) diode is a device designed to protect sensitive electronic components from transients, or voltage spikes, in the electrical circuits they are connected to. The 1N5637A is a device developed to achieve this purpose, and it can be categorized as a TVS diode. This document explores the application field and working principle of the 1N5637A.
Application Field of the 1N5637A
The 1N5637A is designed for a wide range of applications, including AC/DC power supplies, high-speed switch protection, and data communication circuitry. It can also be used for protection in automotive systems and other environments subject to the transients caused by events such as electrostatic discharge (ESD). It is designed to protect up to 8kV of HBM ESD, making it ideal for environments exposed to high levels of electro-magnetic radiation.
Due to its design and specifications, the 1N5637A is capable of handling transients that reach up to 500W minimum to 8.5kV peak, with a clamping voltage of 39V. This makes it suitable for applications such as automotive power supplies, data communications and industrial designs.
The device is also designed to be hot-pluggable, which means it can be inserted and removed from a circuit without any damage to the device or the circuit. Additionally, it is designed to be electrically silent when it is not activated, meaning that it does not affect the electrical properties of the circuit when it is not being tested.
Working Principle of the 1N5637A
The 1N5637A is designed using a specialized diode architecture that utilizes a Zener diode and a transient-voltage suppressor in series. The Zener diode is used to protect the device from the transients that are applied to the circuit. This is because the Zener diode has the ability to absorb the excess voltage and divert the surplus charge away from the circuit, while still allowing the current to flow. The role of the transient-voltage suppressor is to provide protection against voltage transients that are too large for the Zener diode to handle.
When a transient is applied to the circuit, the Zener diode will absorb the excessive voltage and let the current pass through. This voltage is then diverted into the transient-voltage suppressor, which will then shunt the current away from the sensitive components of the circuit. In this way, the 1N5637A is able to protect the sensitive components of the circuit.
Conclusion
The 1N5637A is a device designed to protect sensitive electronic components from voltage spikes. It can handle transients that reach up to 8.5kV peak, with a clamping voltage of 39V. The device is designed using a specialized diode architecture that utilizes a Zener diode and a transient-voltage suppressor in series, which enables it to provide robust protection from voltage transients. It is also designed to be hot-pluggable and electrically silent, making it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5611 | Microsemi Co... | 38.79 $ | 1000 | TVS DIODE |
1N5648 | Littelfuse I... | 0.0 $ | 1000 | TVS DIODE 34.8V 61.9V DO1... |
1N5655A | Microsemi Co... | 15.37 $ | 2 | TVS DIODE 70.1V 113V DO13 |
1N5636A | Microsemi Co... | 15.61 $ | 48 | TVS DIODE 11.1V 18.2V DO1... |
1N5613 | Microsemi Co... | 45.0 $ | 1000 | TVS DIODE C-BODY |
1N5610 | Microsemi Co... | 45.37 $ | 1 | TVS DIODE 30.5V 47.6V G A... |
1N5625-TAP | Vishay Semic... | 0.26 $ | 10000 | DIODE AVALANCHE 400V 3A S... |
1N5627-TAP | Vishay Semic... | 0.27 $ | 10000 | DIODE AVALANCHE 800V 3A S... |
1N5620C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 800V 1A AX... |
1N5616C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 400V 1A AX... |
1N5614 | Microsemi Co... | 4.59 $ | 349 | DIODE GEN PURP 200V 1A AX... |
1N5618 | Microsemi Co... | 4.59 $ | 299 | DIODE GEN PURP 600V 1A AX... |
1N5617 | Microsemi Co... | -- | 181 | DIODE GEN PURP 400V 1A AX... |
1N5618US | Microsemi Co... | 5.95 $ | 481 | DIODE GEN PURP 600V 1A D5... |
1N5615US | Microsemi Co... | 6.31 $ | 430 | DIODE GEN PURP 200V 1A D5... |
1N5617US | Microsemi Co... | 6.95 $ | 458 | DIODE GEN PURP 400V 1A D5... |
1N5619US | Microsemi Co... | 7.77 $ | 163 | DIODE GEN PURP 600V 1A D5... |
1N5624-TR | Vishay Semic... | 0.25 $ | 7500 | DIODE AVALANCHE 200V 3A S... |
1N5620 | Microsemi Co... | 4.73 $ | 161 | DIODE GEN PURP 800V 1A AX... |
1N5616 | Microsemi Co... | 4.59 $ | 270 | DIODE GEN PURP 400V 1A AX... |
1N5617GP-E3/54 | Vishay Semic... | 0.08 $ | 4000 | DIODE GEN PURP 400V 1A DO... |
1N5619GP-E3/54 | Vishay Semic... | 0.08 $ | 8000 | DIODE GEN PURP 600V 1A DO... |
1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
1N5626-TR | Vishay Semic... | -- | 5000 | DIODE AVALANCHE 600V 3A S... |
1N5627-TR | Vishay Semic... | 0.27 $ | 1000 | DIODE AVALANCHE 800V 3A S... |
1N5619 | Microsemi Co... | -- | 177 | DIODE GEN PURP 600V 1A AX... |
1N5616US | Microsemi Co... | 5.95 $ | 191 | DIODE GEN PURP 400V 1A D5... |
1N5615GP-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N5617C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 400V 2A AX... |
1N5622C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N5615 | Microsemi Co... | -- | 82 | DIODE GEN PURP 200V 1A AX... |
1N5624-TAP | Vishay Semic... | 0.22 $ | 1000 | DIODE AVALANCHE 200V 3A S... |
1N5626-TAP | Vishay Semic... | 0.26 $ | 1000 | DIODE AVALANCHE 600V 3A S... |
1N5625-TR | Vishay Semic... | 0.26 $ | 1000 | DIODE AVALANCHE 400V 3A S... |
1N5614US | Microsemi Co... | 6.01 $ | 122 | DIODE GEN PURP 200V 1A D5... |
1N5656A | Microsemi Co... | -- | 26 | TVS DIODE 77.8V 125V DO13 |
1N5647A | Microsemi Co... | 15.37 $ | 450 | TVS DIODE 33.3V 53.9V DO1... |
1N5617E3 | Microsemi Co... | 3.49 $ | 1000 | RECTIFIERDiode Standard 4... |
1N5622 | Semtech Corp... | -- | 1000 | DIODE GEN PURP 1KV 2A AXI... |
1N5622US | Microsemi Co... | 4.45 $ | 1000 | DIODE GEN PURP 1KV 1A D5A... |
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