Allicdata Part #: | 1N5817R1G-ND |
Manufacturer Part#: |
1N5817 R1G |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE SCHOTTKY 20V 1A DO204AL |
More Detail: | Diode Schottky 20V 1A Through Hole DO-204AL (DO-41... |
DataSheet: | 1N5817 R1G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02249 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 20V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 450mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 20V |
Capacitance @ Vr, F: | 55pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 125°C |
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The 1N5817 R1G diode is a single rectifier diode typically used in applications that require high speed switching. It has a fast switching property, which makes it suitable for applications that require a fast response time, such as data and telephone lines.
The 1N5817 R1G diode is an axial leaded, epoxy-coated diode with a uniform, positive temperature coefficient (PTC) of 60mA. It is designed to be used as an input protection device for digital and analog circuits, as well as DC-DC converters, and power supplies. The diode has a high temperature performance and can operate in temperatures up to 150°C.
The 1N5817 R1G diode features a low reverse leakage and a high forward current rating of 1.0 Amp (A). It is typically used in series with other diodes to form a bridge rectifier circuit. The bridge rectifier circuit has the ability to convert alternating current (AC) to direct current (DC). This makes it useful in many applications, including solar panel and battery charging, as well as power converters. The diode is also available in an SOT-23 package.
The 1N5817 R1G diode works by allowing current to pass through the diode when the anode is more positive than the cathode. This occurs when the diode is forward-biased, meaning that the anode has a higher forward voltage than the cathode. When the voltage across the diode is reversed, the diode is in the reverse-biased state and the current between the anode and cathode stops flowing. This prevents the circuit from being damaged by reversed voltage.
The 1N5817 R1G diode is a versatile device, which can be used in many different applications. It has a low parasitic capacitance and fast switching capability, making it suitable for high speed switching applications. Its high temperature performance and low forward voltage drop also make it ideal for high power applications.
The 1N5817 R1G diode is an ideal choice for applications that require fast switching, such as data and telephone lines. It is also suitable for use in DC-DC converters, power supplies, and solar panel and battery charging. The diode has a PTC of 60mA and is available in an SOT-23 package.
The specific data is subject to PDF, and the above content is for reference
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