Allicdata Part #: | 1N5819GOS-ND |
Manufacturer Part#: |
1N5819G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 40V 1A AXIAL |
More Detail: | Diode Schottky 40V 1A Through Hole Axial |
DataSheet: | 1N5819G Datasheet/PDF |
Quantity: | 9257 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 600mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 40V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -65°C ~ 125°C |
Base Part Number: | 1N5819 |
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A rectifier is a type of electrical device design to convert alternating current (AC) to direct current (DC). Rectifiers are widely used for the efficient conversion of AC to DC power and are generally employed in industries where large amounts of power are required, such as in manufacturing, medical and industrial applications. 1N5819G is a rectifier diode and is suitable for use in a wide variety of electronic applications. In this article we will look at the application field and working principle of the 1N5819G rectifier.
The 1N5819G rectifier is a single, epitaxial silicon device. It has the package configuration of a glass case with two leads and utilizes current limiting circuitry. The maximum current rating of the 1N5819G is 3.0 A, with a forward voltage rating of 1.2 V and a reverse voltage rating of 40 V. The maximum thermal junction temperature rating is 150 °C, making it suitable for high-temperature environments. The low reverse capacitance of the device also makes it suitable for use in severe noise environments or in high frequency applications.
The 1N5819G rectifier is suitable for a wide range of applications. It can be used in low-voltage power supplies, rectified DC power supplies, motor drivers and for motor control. It is also suitable for the protection of circuits against high voltage spikes and for the rectification of audio and video signals. The 1N5819G is also suitable for the conversion of AC to DC current in television sets, radios, computers and other consumer electronics.
The working principle of the 1N5819G rectifier is fairly straightforward. The rectifier device uses a semiconductor material, such as silicon, to convert the alternating current (AC) input voltage to a direct current (DC) output voltage. The device contains two electrodes, which are the anode and the cathode, which are connected to the AC voltage source. When the voltage across the electrodes reach a certain level, the voltage at the anode is lowered and the current passes through the rectifier. The device will then continue to regulate the AC voltage until it reaches the predetermined level, thus providing an efficient way to convert AC to DC power.
In summary, the 1N5819G is a rectifier diode suitable for a wide range of applications. The device has a maximum forward voltage of 1.2 V and a reverse voltage rating of 40 V. It is suitable for low-voltage power supplies, rectified DC power supplies, motor drivers and for motor control. The device has a maximum thermal junction temperature rating of 150 °C. The working principle of the device is to convert AC voltage to DC voltage by regulating the voltage across two electrodes, the anode and the cathode. Thus, the 1N5819G offers an efficient way to convert AC to DC power.
The specific data is subject to PDF, and the above content is for reference
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1N5821-TP | Micro Commer... | 0.08 $ | 1200 | DIODE SCHOTTKY 30V 3A DO2... |
1N5820-E3/54 | Vishay Semic... | -- | 19600 | DIODE SCHOTTKY 20V 3A DO2... |
1N5822-E3/54 | Vishay Semic... | -- | 5600 | DIODE SCHOTTKY 40V 3A DO2... |
1N5822RL | STMicroelect... | -- | 3800 | DIODE SCHOTTKY 40V 3A DO2... |
1N5822RLG | ON Semicondu... | -- | 6000 | DIODE SCHOTTKY 40V 3A DO2... |
1N5821 | ON Semicondu... | -- | 1250 | DIODE SCHOTTKY 30V 3A DO2... |
1N5822 | STMicroelect... | -- | 3600 | DIODE SCHOTTKY 40V 3A DO2... |
1N5820 | ON Semicondu... | -- | 2500 | DIODE SCHOTTKY 20V 3A DO2... |
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1N5809US | Microsemi Co... | 7.83 $ | 218 | DIODE GEN PURP 100V 3A B-... |
1N5818G | ON Semicondu... | -- | 8105 | DIODE SCHOTTKY 30V 1A AXI... |
1N5821G | ON Semicondu... | -- | 5711 | DIODE SCHOTTKY 30V 3A DO2... |
1N5822G | ON Semicondu... | -- | 4954 | DIODE SCHOTTKY 40V 3A DO2... |
1N5820G | ON Semicondu... | -- | 1890 | DIODE SCHOTTKY 20V 3A DO2... |
1N5817-B | Diodes Incor... | 0.29 $ | 342 | DIODE SCHOTTKY 20V 1A DO4... |
1N5817G | ON Semicondu... | 0.3 $ | 3446 | DIODE SCHOTTKY 20V 1A AXI... |
1N5819G | ON Semicondu... | -- | 9257 | DIODE SCHOTTKY 40V 1A AXI... |
1N5802 | Microsemi Co... | 6.21 $ | 293 | DIODE GEN PURP 50V 1A AXI... |
1N5819-E3/73 | Vishay Semic... | -- | 9000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5820RLG | ON Semicondu... | -- | 4500 | DIODE SCHOTTKY 20V 3A DO2... |
1N5822-E3/73 | Vishay Semic... | 0.13 $ | 1000 | DIODE SCHOTTKY 40V 3A DO2... |
1N5804US | Microsemi Co... | 8.11 $ | 128 | DIODE GEN PURP 100V 1A D5... |
1N5811US | Microsemi Co... | 7.83 $ | 638 | DIODE GEN PURP 150V 3A B-... |
1N5822US | Microsemi Co... | 81.37 $ | 183 | DIODE SCHOTTKY 40V 3A B-M... |
1N5819 A0G | Taiwan Semic... | 0.04 $ | 9000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5817-TP | Micro Commer... | 0.04 $ | 1000 | DIODE SCHOTTKY 20V 1A DO4... |
1N5819-TP | Micro Commer... | -- | 40000 | DIODE SCHOTTKY 40V 1A DO4... |
1N5818-TP | Micro Commer... | 0.04 $ | 1000 | DIODE SCHOTTKY 30V 1A DO4... |
1N5818-T | Diodes Incor... | -- | 55000 | DIODE SCHOTTKY 30V 1A DO4... |
1N5817-E3/54 | Vishay Semic... | 0.06 $ | 16500 | DIODE SCHOTTKY 20V 1A DO2... |
1N5818-E3/54 | Vishay Semic... | -- | 5500 | DIODE SCHOTTKY 30V 1A DO2... |
1N5818 | ON Semicondu... | -- | 20000 | DIODE SCHOTTKY 30V 1A DO4... |
1N5819RL | STMicroelect... | -- | 5000 | DIODE SCHOTTKY 40V 1A DO4... |
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