1N5820RLG Discrete Semiconductor Products |
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Allicdata Part #: | 1N5820RLGOSTR-ND |
Manufacturer Part#: |
1N5820RLG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 20V 3A DO201AD |
More Detail: | Diode Schottky 20V 3A Through Hole DO-201AD |
DataSheet: | 1N5820RLG Datasheet/PDF |
Quantity: | 4500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 20V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 475mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 2mA @ 20V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-201AA, DO-27, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 125°C |
Base Part Number: | 1N5820 |
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The 1N5820RLG is a single-phase, 20-volt, 3-amp schottky silicon rectifier made of gallium arsenide designed to handle engineering, medical, and high-speed applications. A Schottky rectifier provides faster switching at higher temperatures than a regular silicon diode rectifier due to its low forward voltage drop and low reverse leakage characteristics. Due to these characteristics, the 1N5820RLG is suitable for high-speed switching applications such as smoothing and filtering capacitors, frequency converters, and transistor circuits when high switching speeds are needed.
The 1N5820RLG also has a low capacitance characteristic, which makes it suitable for high-speed RF switching applications such as antennas, transponders, modulators, and repeaters. The 1N5820RLG can also be used in linear feedback circuits to control signal gain, and in other applications where high-speed signal conditioning is needed.
The 1N5820RLG typically has a peak forward surge current of 8 amperes, and a maximum repetitious reverse peak voltage of 25 volts. The 1N5820RLG is available in a variety of packages to suit different application needs.
The working principle of the 1N5820RLG is relatively simple. The diode is connected in series with an anode and cathode, and when a voltage is applied across the two terminals, current begins to flow from the anode to the cathode. This current flow is what is referred to as "rectification". As the current is drawn from the anode, the diode\'s voltage drops, creating a voltage drop, or "reverse voltage protection".
When the anode voltage reaches 0V, the diode is said to be "off" and no current can flow. If a higher voltage is applied, the diode will be on, allowing current to flow in both directions. The current can be controlled and regulated by controlling the voltage across the terminals. The amount of current flow is determined by the forward voltage drop of the diode, and the amount of voltage required to turn the diode on and off is determined by the reverse voltage of the diode.
In summary, the 1N5820RLG is a single-phase, 20-volt, 3-amp schottky silicon rectifier designed for high-speed switching applications. It has a low capacitance characteristic, and a peek forward surge current of 8 amperes. The 1N5820RLG has a low forward voltage drop and low reverse leakage characteristics, and can be used in applications where high-speed signal conditioning is needed. The 1N5820RLG\'s working principle is based on rectification and reverse voltage protection, and current flow can be regulated by controlling the voltage across the two terminals.
The specific data is subject to PDF, and the above content is for reference
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1N5821-TP | Micro Commer... | 0.08 $ | 1200 | DIODE SCHOTTKY 30V 3A DO2... |
1N5820-E3/54 | Vishay Semic... | -- | 19600 | DIODE SCHOTTKY 20V 3A DO2... |
1N5822-E3/54 | Vishay Semic... | -- | 5600 | DIODE SCHOTTKY 40V 3A DO2... |
1N5822RL | STMicroelect... | -- | 3800 | DIODE SCHOTTKY 40V 3A DO2... |
1N5822RLG | ON Semicondu... | -- | 6000 | DIODE SCHOTTKY 40V 3A DO2... |
1N5821 | ON Semicondu... | -- | 1250 | DIODE SCHOTTKY 30V 3A DO2... |
1N5822 | STMicroelect... | -- | 3600 | DIODE SCHOTTKY 40V 3A DO2... |
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1N5821G | ON Semicondu... | -- | 5711 | DIODE SCHOTTKY 30V 3A DO2... |
1N5822G | ON Semicondu... | -- | 4954 | DIODE SCHOTTKY 40V 3A DO2... |
1N5820G | ON Semicondu... | -- | 1890 | DIODE SCHOTTKY 20V 3A DO2... |
1N5817-B | Diodes Incor... | 0.29 $ | 342 | DIODE SCHOTTKY 20V 1A DO4... |
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1N5802 | Microsemi Co... | 6.21 $ | 293 | DIODE GEN PURP 50V 1A AXI... |
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1N5820RLG | ON Semicondu... | -- | 4500 | DIODE SCHOTTKY 20V 3A DO2... |
1N5822-E3/73 | Vishay Semic... | 0.13 $ | 1000 | DIODE SCHOTTKY 40V 3A DO2... |
1N5804US | Microsemi Co... | 8.11 $ | 128 | DIODE GEN PURP 100V 1A D5... |
1N5811US | Microsemi Co... | 7.83 $ | 638 | DIODE GEN PURP 150V 3A B-... |
1N5822US | Microsemi Co... | 81.37 $ | 183 | DIODE SCHOTTKY 40V 3A B-M... |
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1N5817-TP | Micro Commer... | 0.04 $ | 1000 | DIODE SCHOTTKY 20V 1A DO4... |
1N5819-TP | Micro Commer... | -- | 40000 | DIODE SCHOTTKY 40V 1A DO4... |
1N5818-TP | Micro Commer... | 0.04 $ | 1000 | DIODE SCHOTTKY 30V 1A DO4... |
1N5818-T | Diodes Incor... | -- | 55000 | DIODE SCHOTTKY 30V 1A DO4... |
1N5817-E3/54 | Vishay Semic... | 0.06 $ | 16500 | DIODE SCHOTTKY 20V 1A DO2... |
1N5818-E3/54 | Vishay Semic... | -- | 5500 | DIODE SCHOTTKY 30V 1A DO2... |
1N5818 | ON Semicondu... | -- | 20000 | DIODE SCHOTTKY 30V 1A DO4... |
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