Allicdata Part #: | 1N5818GOS-ND |
Manufacturer Part#: |
1N5818G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 30V 1A AXIAL |
More Detail: | Diode Schottky 30V 1A Through Hole Axial |
DataSheet: | 1N5818G Datasheet/PDF |
Quantity: | 8105 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 550mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 30V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -65°C ~ 125°C |
Base Part Number: | 1N5818 |
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The 1N5818G diode falls under the single rectifier diode classification. A single rectifier diode is designed to provide a single path for the flow of current. In the basic case, single rectifier diodes are designed to permit the flow of current in only one direction. In turn, this allows for the voltage at one end of the diode to be measured as a reference against the other, creating a bipolar junction transistor. As such, the 1N5818G is commonly used as a reference diode to measure and control the flow of current.
The 1N5818G is a small signal, fast rectifier diode with a forward voltage drop of 1.2V and a maximum reverse leakage current of 5mA. It is capable of handling a maximum reverse voltage of 25V, and a maximum reverse current of 9.2A. The 1N5818G also has a high surge current handling capability, with a maximum peak pulse current of 18A.
One of the primary applications for the 1N5818G is in low power high-frequency switching circuits, such as gate drivers. Since gate drivers require both low forward voltage drop and low leakage, the 1N5818G is an ideal choice for the application. The 1N5818G is also used in power applications where it can help regulate and control the flow of current from a power source. Its low forward voltage drop also makes it useful in regulating the voltage in signal circuits that use a reverse coil or alternatively in linear circuits applications.
The main working principle of the 1N5818G is based on the same principles as other single rectifier diodes. The basic structure of the device includes a p-type and n-type semiconductor which form the bipolar junction transistor. When power is applied to the diode, the electrical field created between the p and n-type semiconductors causes current to flow. As current flows through the diode, it creates a potential across the diode which is known as the voltage drop. This voltage drop is what is then used to control the flow of current. If the voltage drop is too high, then the current flow is restricted and if the voltage drop is too low, then the current flow is unrestricted.
The 1N5818G is thus an ideal choice for use in both low power high-frequency switching circuits as well as power applications. The device is easy to use and offers reliable performance in challenging environments. Its robust construction and low forward voltage drop also make it a reliable choice for regulating the flow of current in signal circuits and linear circuits applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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1N5822-TP | Micro Commer... | 0.08 $ | 4800 | DIODE SCHOTTKY 40V 3A DO2... |
1N5821-TP | Micro Commer... | 0.08 $ | 1200 | DIODE SCHOTTKY 30V 3A DO2... |
1N5820-E3/54 | Vishay Semic... | -- | 19600 | DIODE SCHOTTKY 20V 3A DO2... |
1N5822-E3/54 | Vishay Semic... | -- | 5600 | DIODE SCHOTTKY 40V 3A DO2... |
1N5822RL | STMicroelect... | -- | 3800 | DIODE SCHOTTKY 40V 3A DO2... |
1N5822RLG | ON Semicondu... | -- | 6000 | DIODE SCHOTTKY 40V 3A DO2... |
1N5821 | ON Semicondu... | -- | 1250 | DIODE SCHOTTKY 30V 3A DO2... |
1N5822 | STMicroelect... | -- | 3600 | DIODE SCHOTTKY 40V 3A DO2... |
1N5820 | ON Semicondu... | -- | 2500 | DIODE SCHOTTKY 20V 3A DO2... |
1N5811C.TR | Semtech Corp... | 2.65 $ | 1000 | DIODE GEN PURP 150V 6A AX... |
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1N5807 | Microsemi Co... | 7.81 $ | 175 | DIODE GEN PURP 50V 3A AXI... |
1N5809US | Microsemi Co... | 7.83 $ | 218 | DIODE GEN PURP 100V 3A B-... |
1N5818G | ON Semicondu... | -- | 8105 | DIODE SCHOTTKY 30V 1A AXI... |
1N5821G | ON Semicondu... | -- | 5711 | DIODE SCHOTTKY 30V 3A DO2... |
1N5822G | ON Semicondu... | -- | 4954 | DIODE SCHOTTKY 40V 3A DO2... |
1N5820G | ON Semicondu... | -- | 1890 | DIODE SCHOTTKY 20V 3A DO2... |
1N5817-B | Diodes Incor... | 0.29 $ | 342 | DIODE SCHOTTKY 20V 1A DO4... |
1N5817G | ON Semicondu... | 0.3 $ | 3446 | DIODE SCHOTTKY 20V 1A AXI... |
1N5819G | ON Semicondu... | -- | 9257 | DIODE SCHOTTKY 40V 1A AXI... |
1N5802 | Microsemi Co... | 6.21 $ | 293 | DIODE GEN PURP 50V 1A AXI... |
1N5819-E3/73 | Vishay Semic... | -- | 9000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5820RLG | ON Semicondu... | -- | 4500 | DIODE SCHOTTKY 20V 3A DO2... |
1N5822-E3/73 | Vishay Semic... | 0.13 $ | 1000 | DIODE SCHOTTKY 40V 3A DO2... |
1N5804US | Microsemi Co... | 8.11 $ | 128 | DIODE GEN PURP 100V 1A D5... |
1N5811US | Microsemi Co... | 7.83 $ | 638 | DIODE GEN PURP 150V 3A B-... |
1N5822US | Microsemi Co... | 81.37 $ | 183 | DIODE SCHOTTKY 40V 3A B-M... |
1N5819 A0G | Taiwan Semic... | 0.04 $ | 9000 | DIODE SCHOTTKY 40V 1A DO2... |
1N5817-TP | Micro Commer... | 0.04 $ | 1000 | DIODE SCHOTTKY 20V 1A DO4... |
1N5819-TP | Micro Commer... | -- | 40000 | DIODE SCHOTTKY 40V 1A DO4... |
1N5818-TP | Micro Commer... | 0.04 $ | 1000 | DIODE SCHOTTKY 30V 1A DO4... |
1N5818-T | Diodes Incor... | -- | 55000 | DIODE SCHOTTKY 30V 1A DO4... |
1N5817-E3/54 | Vishay Semic... | 0.06 $ | 16500 | DIODE SCHOTTKY 20V 1A DO2... |
1N5818-E3/54 | Vishay Semic... | -- | 5500 | DIODE SCHOTTKY 30V 1A DO2... |
1N5818 | ON Semicondu... | -- | 20000 | DIODE SCHOTTKY 30V 1A DO4... |
1N5819RL | STMicroelect... | -- | 5000 | DIODE SCHOTTKY 40V 1A DO4... |
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