1N5818M-13 Allicdata Electronics
Allicdata Part #:

1N5818MDITR-ND

Manufacturer Part#:

1N5818M-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE SCHOTTKY 30V 1A MELF
More Detail: Diode Schottky 30V 1A Surface Mount MELF
DataSheet: 1N5818M-13 datasheet1N5818M-13 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: MELF
Operating Temperature - Junction: -60°C ~ 125°C
Base Part Number: 1N5818
Description

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1N5818M-13 Diodes - Rectifiers - Single Application Field and Working Principle

A diode is a kind of electronic component which performs the basic function of a rectifier. 1N5818M-13 is one kind of diode which belongs to the category of “Diodes – Rectifiers – Single”. This article will introduce the application field and working principle of the 1N5818M-13. Understanding how it works will help people who want to use it in their projects.

The 1N5818M-13 diodes are widely used to rectify low-power, low-voltage electronic signals or in half-wave rectifier circuits, power supplies, and voltage regulators. They are widely used in the electronics industry, especially for applications that require low-current rectification, such as telecommunications equipment, automotive systems, audio equipment, and computer peripherals. They are particularly suitable for low-power/low-voltage applications that require high input reverse voltage and low forward voltage, as well as low forward current and high temperature operation.

It is a three-terminal semiconductor device with a P-N junction. The junction is connected to two metal contacts, one on each side, that correspond to the anode and cathode. The current travels from the anode to the cathode, and when an external voltage is applied, it forces the electrons to cross the junction and flow in the opposite direction. The direction of current flow through the diode is determined by the polarity of the applied voltage; current will only flow through the diode in one direction (from anode to cathode).

The 1N5818M-13 has a reverse blocking voltage of 300V, while the maximum forward voltage at 0.5A is 1.2V. The maximum current is 0.5A, with a response time of 5ns. To ensure proper operation, it must be operated well within its ratings. If the voltage or current exceeds its rated values, the diode can be damaged. The 1N5818M-13 also has a low electron leakage current, making it ideal for use in low-power applications.

The 1N5818M-13 has a high breakdown voltage, low capacitance, and low forward voltage drop. That makes it ideal for power applications, like power supplies, voltage regulators, half-wave rectifier circuits, and more. It also has a low standby current, making it more power efficient compared to other diodes. Additionally, its high temperature rating should allow it to withstand high temperatures, making it suitable for applications in high temperature environments.

To summarize, the 1N5818M-13 is a diode which is commonly used in low-power and low-voltage electronic circuits. It has a high breakdown voltage, low forward voltage drop, and low standby current, making it ideal for power applications. It is suitable for high temperature applications and has a response time of 5ns. As long as it is operated within its rating values, the 1N5818M-13 should provide reliable service for many years.

The specific data is subject to PDF, and the above content is for reference

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