1N5819 R0G Allicdata Electronics
Allicdata Part #:

1N5819R0G-ND

Manufacturer Part#:

1N5819 R0G

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE SCHOTTKY 40V 1A DO204AL
More Detail: Diode Schottky 40V 1A Through Hole DO-204AL (DO-41...
DataSheet: 1N5819 R0G datasheet1N5819 R0G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02609
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 125°C
Description

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Introduction

The 1N5819 R0G diode is a type of rectifier diode designed for general-purpose, low power use. It is available in both through-hole and surface-mount packages, making it a versatile option for both industrial and commercial applications.

Properties

The 1N5819 R0G diode is designed with a range of features that make it well-suited for a variety of applications. It has a low forward voltage drop of about 1.2V when conducting, and the breakdown voltage is about 25V. The maximum forward current is 1A, which is suitable for most general-purpose application.

Applications

Given its low power use, the 1N5819 R0G diode is a good option for applications that don’t need a lot of power. Its applications include lighting, power rectification, power supplies, voltage regulation, and AC/DC conversion. It is also suitable for reversing circuits, and other low power applications.

Working Principle

The 1N5819 R0G diode operates on a simple semiconductor principle, where current is allowed to pass in one direction, while being blocked in the other. This is done by creating a junction between two semiconductor materials (in this case, p-doped germanium and n-doped silicon). When voltage is applied, free electrons in the p-doped layer move to fill the “holes” in the n-doped layer, creating an electrical barrier and preventing current from flowing in the opposite direction.

Conclusion

The 1N5819 R0G diode is an excellent choice for low power applications that require a reliable rectification solution. Its low forward voltage and wide operating temperature range make it well-suited for a variety of applications, from lighting and power rectification to AC/DC conversion. Its simple, yet efficient working principle allows it to effectively reduce currents in one direction, while allowing for flow in the other.

The specific data is subject to PDF, and the above content is for reference

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