1N5819 Discrete Semiconductor Products

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1N5819 is a single rectifier diode, adopted from the same family that is created by Schottky, but uses a different physical principle for signal switching and rectification. The device is designed for use with medium- and low-current applications and enables reliable operation in electronic systems.

Overview

The 1N5819 is a very small state-of-the-art Schottky diode that features a double plug tunneling (DPT) junction structure, comprising the elements molybdenum (Mo) and silicon (Si). These elements create a tunnel barrier between the emitter and collector contacts, which enables efficient conduction and low leakage currents in the opposite direction. The construction is also capable of handling high current density, realigning the electric field, and helping suppress thermal runaway.

Application Areas

1N5819 can be employed in a variety of applications such as free wheel diodes, reverse voltage protection, clamping diodes, switching diodes, transient voltage suppression, and surge protection. Other applications include rectification, RF switches, and power supplies. The device is also suitable for use in automotive and high temperature applications such as headlights, charging systems, and electronic ignitions.

Working Principle

The 1N5819 diode operates on the principle of a tunnel diode. This refers to a junctions PN or PIN having an extremely thin opening. Due to this small gap, the field created between the two regions is preserved, while electrons tunnel through the barrier, allowing current flow in spite of the high resistance of the junction. The electric field decreases as the electrons tunnel and reduces the barrier, which results in higher current conduction.

The 1N5819 diode works on the basis of the Schottky tunnel diode, which is able to switch higher frequencies with impressive efficiency. The main feature of this device is its ability to produce an amplified voltage with a low forward voltage drop, due to the electron leak effect. This allows it to conduct more current than a conventional diode, enabling higher conduction and speedy switching.

Advantages

The 1N5819 diode offers several benefits when compared to other types of diodes, such as its low forward voltage drop, faster switching speed, low series output resistance, low inter-terminal capacitance, high-current density, and low leakage current. Additionally, it is a highly reliable component that does not require additional protection to withstand high temperatures and surges.

Conclusion

The 1N5819 is a single rectifier diode, highly suitable for medium- and low-current applications. It features a double plug tunneling (DPT) junction structure and works on the basis of a Schottky tunnel diode, enabling the reliable and efficient conduction of both direct and reverse currents. The device is mainly used as a switching or protection component and offers several benefits, such as low forward voltage drop, fast switching speed, low resistance, and high current density.

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