1N5819HW-7-F

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1N5819HW-7-F is a single rectifier diode belongs to the family of 1N58xx series of standard recovery rectifiers. These diodes are designated with robust construction that employ the moulded plastic package thereby has the unrestricted mounting and extended safe operating area. It is designed to provide explicit high surge current capability, low forward voltage drop, low leakage current and high temperature grade.

It is also designed with special features such as its epoxy encapsulated case renders it impervious to thermal shock as well as mechanical resonances. The 1N5819HW-7-F is constructed around Silicon which is a commonly used dopant. As per its electrical properties, the device offers a voltage rating of 100V and current rating of 1.25A. It also offers an energy rating of 200mJ, forward voltage of 950mV and reverse current of 4nA that make it suitable for a wide range of applications.

The 1N5819HW-7-F is most commonly used in digital circuits, power supplies and applications that require high temperature grade. It is ideal for digital circuits as it can suppress transients and provide forward current protection in circuit applications. The diode is also used in other applications where high surge current capabilities, high temperature grade and low forward voltage drop are required. It is also suitable for many lighting applications such as LED lighting and is used in solar panels to prevent backflow of current.

The 1N5819HW-7-F utilizes a simple but effective working principle which is that of a standard rectifier. It has two terminals - Anode (+) and Cathode (-). When a positive voltage is applied to the anode of the 1N5819HW-7-F and a negative voltage is applied to its cathode, a diode current can flow through the diode. In the forward direction, the diode conducts current and the current flow is limited by the voltage drop across the diode. This voltage drop is known as the forward voltage drop and for the 1N5819HW-7-F this is typically 950mV. This effectively limits the amount of current that can flow through the diode, which is equal to the diode forward current.

The 1N5819HW-7-F is a robust device, suitable for a wide range of applications due to its high temperature grade, high surge current capabilities, low forward voltage drop and low leakage current capabilities. It is a widely used component in digital circuits, power supplies, LED lighting and solar panels.

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