1N5822HB0G

1N5822HB0G is a single phase, metal case, silicon Rectifier. It comes in a broad range of case styles and current capacities, including a metal-oxide varistor that offers protection against extreme voltage overload or lightning strikes. As a single type rectifier, it can be used in a variety of applications, from engine and alternator circuits to monitoring systems and lighting control. 1N5822HB0G can also be used for blocking and in switching circuits.

1N5822HB0G can be used for a variety of tasks, ranging from conventional rectification of alternating current to the more specialized purpose of providing static power. The application field for 1N5822HB0G is as varied as its applications. The most common applications are in high-velocity and ultra-precision systems, automotive, medical and industrial applications. Some of the typical application examples include AC adapter, power supplies and inverters, motor control circuits, green energy systems, communications systems, and LED lighting.

The working principle of 1N5822HB0G is based on a semiconductor diode and in its most basic form consists of two oppositely doped regions, separated by a thin junction between them. The diode is characterized by its threshold voltage, or “breakdown voltage”, Vb. When the voltage across the diode is greater than this voltage, it becomes forward-biased and can conduct current. When the voltage is saturated, the diode can conduct current at levels equal to its rated current, which is usually significantly higher than the level of current it can conduct when forward-biased.

The forwarding bias of the diode is defined by its oxide drift resistance which is the entire series of voltage drops across the product of oxide resistivity and length. The reverse bias resistance is guaranteed by the built-in junction capacitance which creates a significant reverse bias with respect to the average external junction capacitance. When the reverse bias exceeded the rating value of the diode, the junction capacitance will quickly discharge and reverse the voltage above its forward bias. The typical value of forward bias voltage is 2 V and its breakdown voltage is greater than 4 V.

In addition, 1N5822HB0G can be operated in pulsed and low-frequency mode. When it operates in pulsed mode the peak current is higher than its average current. The pulse-current capability is based on their reverse leakage current, capacitance and reverse voltage ratings. The diode has a very low forward conduction voltage, allowing for low voltage operation. This makes it ideal for low voltage power systems.

1N5822HB0G is a typical rectifier being used in a variety of different applications. Its characteristic traits, such as its low forward conduction voltage and its high reverse bias, make it suitable for a wide range of tasks. Its use is also dependent on the specific application, with its most common uses being in high-velocity and ultra-precision systems, automotive, medical and industrial applications.