
Allicdata Part #: | 1N8149-ND |
Manufacturer Part#: |
1N8149 |
Price: | $ 16.54 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 6.8V 12.8V A AXIAL |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 15.03010 |
Voltage - Clamping (Max) @ Ipp: | 12.8V |
Supplier Device Package: | A, Axial |
Package / Case: | A, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 150W |
Current - Peak Pulse (10/1000µs): | 11.7A |
Series: | -- |
Voltage - Breakdown (Min): | 7.79V |
Voltage - Reverse Standoff (Typ): | 6.8V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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1N8149 Application Field and Working Principle
A 1N8149 is a fast breakover diode designed for a multitude of electrical applications, including the survivability of sensitive signals. It is versatile as it can be used in a variety of equipment, such as digital cameras, CD players, and electronic measuring equipment. The 1N8149 has a wide variety of characteristics, such as an ultra-fast reverse recovery time, low capacitance, high peak current rating, and small junction capacity.
The 1N8149 is part of the Transient Voltage Suppression (TVS) Diode family, which are designed to provide protection for electronic components from electrical overstress. Electrical overstress occurs when an electric device is subjected to high voltage, high dv/dt, and high current, which can be caused by lightning strikes or Electric Discharge Machining (EDM). TVS devices provide circuit protection from these hazardous surges of energy.
1N8149 Operating Principles
The operating principle of a 1N8149 is similar to that of other diode devices. It employs a junction between two types of semiconductor materials, a PN junction, in which the electrons of the electrons of one material flow into the holes of the other material. This flow between the materials creates an electrical potential that can be used to switch electrical current on and off. The electricity flows through the junction and is either blocked, or conducted depending upon the bias of the voltage.
When a 1N8149 is in a forward-biased state, the current flowing through it is unidirectional and the voltage is limited. When a negative voltage is applied at the anode of the diode, current flows from the negative lead through the diode to the positive lead. The reverse orientation of the device creates a reverse-biased state in which no current flows. However, when a certain voltage potential is reached, the current begins to break through, allowing for a quick discharge of energy.
Applications of 1N8149
A 1N8149 can be used for a variety of applications, ranging from protecting circuits from high-voltage spikes to protecting automobile electronic systems from damage caused by lightning strikes. Some of the most common applications of this diode include surge protection in computer devices, laser diodes, over-voltage protection in automotive electronics, and high-voltage protection in digital electronics. In addition, the 1N8149 is often used in industrial and consumer electronic devices to protect them from ESD, or electro-static discharge.
In addition to surge protection, 1N8149s also offer low reverse leakage current, fast switching speeds, and low distortion. These characteristics make them ideal for high frequency applications, such as communication and medical equipment. The device can also be used as a current-limiting device, as it will protect sensitive components from surges of excess current passing through the circuit.
The 1N8149 is an invaluable tool for protecting delicate electronic equipment from electrical damage due to lightning strikes or power surges. It is used in a wide array of applications and its characteristics make it a preferred choice for high frequency circuits. This versatile diode is also cost-effective, making it an attractive option for engineers and technicians who need to protect their devices from potentially damaging electrical overstress.
The specific data is subject to PDF, and the above content is for reference
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1N8147US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
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