1N8170US

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TVS-Diodes are used in various industries for various applications, such as protection against transient events in electrical systems. The 1N8170US is used in applications that require an integrated solution combining both low capacitance and low clamping voltage. These attributes, when combined, make the 1N8170US an ideal component for transient voltage suppression.

The 1N8170US is a silicon avalanche diode, designed specifically to suppress transient voltage spikes, including electrical transients caused by switching voltage sources, surges, electrostatic discharge, electrical overstress and electro-mechanical transients. The 1N8170US is composed of two silicon wafers, a cathode and an anode, which are usually bonded together. The front wafer is made from a heavily doped P-type material, while the back wafer is made from an undoped N-type material. The 1N8170US features a built-in, high-speed state-of-the-art circuit to help control overvoltage conditions.

The 1N8170US has a peak pulse power rating of 1.1kW and a peak pulse current of 1A. It is capable of withstanding up to 4,000V of peak pulse voltage in an 8/20µs wave shape. The device has an operating temperature range from -55°C to +125°C and a storage temperature range from -55°C to +125°C. It is also RoHS compliant.

The 1N8170US works by utilizing the avalanche breakdown principle, which occurs when a current is passed through a PN junction that is exposed to a high reverse bias voltage. In the 1N8170US, the proposed avalanche breakdown occurs when the voltage waveform exceeds the peak power rating or the peak pulse voltage rating of this device. When this happens, the breakdown voltage increases rapidly and a large magnitude of current is generated. This current is dissipated by the device in a short period of time, thus protecting the delicate circuits against voltage transients.

The 1N8170US works by clamping the voltage of a transient event. It does this by creating a low impedance path, allowing large current to flow for a short period of time, thus limiting the rise in voltage. This helps protect the electrical components from the damaging or malfunctioning effects of voltage transients. It also helps to maintain proper power regulation and voltage level in the system.

The 1N8170US is useful in a variety of applications, including power supplies, digital and analog electronics, and automotive systems. It can be used in circuits that require high levels of surge and transient protection. Its low capacitance-clamping voltage combination makes it an ideal component for transient voltage suppression, further protecting networks and valuable data from voltage transients.

In conclusion, the 1N8170US is a versatile component that can be used for a variety of applications, from power supplies to automotive systems. It is designed to provide high levels of surge and transient protection, and its low capacitance-clamping voltage combination make it an ideal choice for suppressing transient voltage spikes. In short, the 1N8170US is a reliable and effective solution for transient voltage suppression in a wide variety of applications.

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