
Allicdata Part #: | 1N8177US-ND |
Manufacturer Part#: |
1N8177US |
Price: | $ 15.20 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 13.81720 |
Specifications
Series: | * |
Part Status: | Active |
RoHS Status: | RoHS non-compliant |
Description
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Overview of 1N8177US TVS-Diodes
A TVS-diode, also known as a Transient Voltage Suppressor, is a passive electronic device used to protect electric circuits from high-voltage common-mode and differential-mode transient over-voltages. The 1N8177US TVS-diode is a unidirectional, silicon avalanche voltage suppressor designed specifically to protect against ESD and lightning surges. This device is a low capacitance suppressor, suitable for telecommunication and other high-speed applications.Features of 1N8177US TVS-Diodes
The 1N8177US TVS-diode features a low capacitance of under 0.2 pF, making it suitable for high-speed communication applications, such as modem and telephone data line suppression. It has an operating voltage of up to 5V, and a peak pulse power of 600 Watts. The avalanche breakdown voltage of the 1N8177US is 6.8 Volts. The device\'s reverse breakdown voltage is 6.5 to 7.6 Volts.Application Field and Working Principle of 1N8177US TVS-Diodes
The 1N8177US TVS-diode is mainly used in telecommunication lines, Ethernet ports, and other high-speed data lines, to provide ESD and lightning surge protection. They are also commonly used in automotive applications, such as CAN bus, PAL-bus, and DSP-bus, to protect against overvoltages caused by electrostatic discharge (ESD).The device works by allowing current to flow in one direction when the voltage is below a certain threshold. When the voltage exceeds this threshold, the device abruptly switches to a high impedance state, clamping the transient voltage to a safe level. When the voltage drops, the device returns to the conducting state. The avalanche breakdown voltage determines the clamping voltage of the device. Comparing the avalanche voltage to the peak pulse power rating of the device reveals how much voltage can be clamped without causing damage to the device. The lower the avalanche voltage, the higher the peak pulse power. Therefore, the avalanche breakdown voltage should be equal to or lower than the peak pulse power of the device, to ensure it can clamp the transient voltage without getting damaged. The working principle of the 1N8177US TVS-diode is similar to that of a Zener diode, however unlike a Zener diode, it is designed to be unidirectional, as opposed to bidirectional. As with any diode, the 1N8177US can be connected with either a positive or a negative terminal, depending on the direction of current flow.Conclusion
The 1N8177US TVS-diode is a critical component for protecting sensitive electronics from ESD and lightning surges. It offers a low capacitance of 0.2 pF, a peak pulse power rating of 600 watts, and an avalanche breakdown voltage of 6.8 Volts. The device is suitable for a wide range of applications, such as telecommunication, Ethernet, and automotive. Its unidirectional design allows it to be used in both positive and negative current directions. The working principle of the 1N8177US is similar to that of a Zener diode, and is used to effectively protect against overvoltages caused by ESD and lightning surges.The specific data is subject to PDF, and the above content is for reference
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Part Number | Manufacturer | Price | Quantity | Description |
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1N8168US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8173US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8149 | Microsemi Co... | 16.54 $ | 1000 | TVS DIODE 6.8V 12.8V A AX... |
1N8175US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8163US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8147 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8161US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8173 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8159US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8180US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8153US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8157 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8161 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8171 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8176 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8162US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8152 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8179 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8175 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8174 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8177 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8160US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8156 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8170US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8151US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8177US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8178US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8160 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8158US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8157US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8148US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8169 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8168 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8181 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8181US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8158 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8172US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8147US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8148 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8154 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
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