
1N8160 Circuit Protection |
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Allicdata Part #: | 1N8160-ND |
Manufacturer Part#: |
1N8160 |
Price: | $ 15.09 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 13.72310 |
Series: | * |
Part Status: | Active |
RoHS Status: | RoHS non-compliant |
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The 1N8160 is a small signal silicon junction transient voltage suppressor (TVS) diode. It is commonly used in protecting sensitive electronic components from being damaged due to overvoltage transients and surges. It is designed for use in voltage and signal clamping applications, and is particularly well suited for low-capacitance signal line protection. This diode is available in the very small industry standard SOD-323 package.
The 1N8160 is a unidirectional silicon junction diode with two terminals, an anode and a cathode. The anode is marked with a black ring. It is designed to be connected between the protected circuitry and ground or the supply voltage. When connected in this manner, it provides effective clamping of transient and reversal voltages, as well as providing isolation from, and protection to, the protected circuitry. When subjected to normal operating voltages, the diode is in a reverse-bias condition and does not conduct, resulting in very low insertion losses.
The 1N8160 has an operating reverse break down voltage (VRWM) of 8.3 volts when measured in an ambient temperature of 25°C. This voltage can affected by temperature rise; with an increase in temperature, VRWM decreases (referred to as temperature degradation). This means that under higher temperature, the device could become conductive at lower voltages than specified.
At breakdown, an avalanche effect occurs, so the device’s power dissipation and capacitance also increases. The TVS diode’s properties enable it to absorb much higher power during the transient. This diode can dissipate up to 750 mW when connected to a 25°C heatsink. It also has very low junction capacitance of only 0.3pF, allowing it to provide effective protection for low speed and high speed signal lines.
The 1N8160 is widely used in many digital, analogue and RF applications where it provides protection from transient voltages. It is used in power supplies, microcontrollers and chipsets, modems, portable electronics, and automotive applications. Commonly, it is used in conjunction with other components to form a suppression network for signal line protection.
In conclusion, the 1N8160 TVS diode is an excellent choice for low-capacitance signal line protection. It has very low power consumption, low junction capacitance and high power dissipation ratings. The break down voltage of this diode reduces with temperature rise; thus, it is important to calculate the effective working temperature in order to determine the correct voltage for protection.
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1N8158US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
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1N8148US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8169 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
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1N8181 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8181US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8158 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8172US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8147US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8148 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8154 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
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