
1N8181US Circuit Protection |
|
Allicdata Part #: | 1N8181US-ND |
Manufacturer Part#: |
1N8181US |
Price: | $ 15.20 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 13.81720 |
Series: | * |
Part Status: | Active |
RoHS Status: | RoHS non-compliant |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 1N8181US is a unipolar, bidirectional, transient voltage suppression (TVS) diode that is used to protect electrical devices from transients. It has a reverse stand-off voltage (VRSM) of 5.0 volts and a peak pulse power rating of 1500 watts peak pulse power (tPPM).
Application Fields
The 1N8181US is most commonly used as a protection element in power supplies, automotive, communications, and industrial circuits. It can also be used in microcontroller-based systems, digital systems, and personal computers, where it can be used to provide protection against electrostatic discharges (ESD). This type of diode is especially useful in protecting sensitive computer components that are vulnerable to ESD damage due to their high input impedance.
Working Principle
The 1N8181US works by clamping the voltage to the V RS M rating of 5.0 volts whenever the voltage rises above the V RS M value. This clamping action is achieved by the diode’s junction capacitance and the avalanche effect, which occurs when electric current becomes overwhelming and causes a breakdown of the p-n junction of the diode. The breakdown causes a high avalanche current, which limits the peak voltage seen by the protected circuit.
The 1N8181US is designed to protect against high voltage transients and low voltage surges. Its robust design and high peak power handling make it suitable for use in high-current and high-voltage applications. The diode also features a low dynamic resistance, which reduces noise and power dissipation during pulse transients. This provides a stable, low-voltage operating point for the protected circuit and ensures that transients are quickly and accurately clamped to the V RS M voltage.
In order to work effectively, the 1N8181US must be connected in the reverse direction. This is accomplished by connecting the diode\'s anode to the voltage line being protected and its cathode connected to ground. This reverse connection ensures that the voltage is regulated to the diode\'s breakdown voltage, VRSM.
Conclusion
The 1N8181US is an excellent choice for protecting electrical systems against transients and surges. Its robust construction and high power handling make it suitable for a number of industrial, automotive, communication, and power supply applications. The diode\'s low dynamic resistance reduces power dissipation and noise on pulse transients and helps keep sensitive computer components safe from ESD damage. The 1N8181US is an ideal choice for protecting valuable electronic components and circuitry from the damaging effects of transients and surges.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N8168US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8173US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8149 | Microsemi Co... | 16.54 $ | 1000 | TVS DIODE 6.8V 12.8V A AX... |
1N8175US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8163US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8147 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8161US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8173 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8159US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8180US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8153US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8157 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8161 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8171 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8176 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8162US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8152 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8179 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8175 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8174 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8177 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8160US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8156 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8170US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8151US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8177US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8178US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8160 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8158US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8157US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8148US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8169 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8168 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8181 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8181US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8158 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8172US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8147US | Microsemi Co... | 15.2 $ | 1000 | TVS DIODE |
1N8148 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
1N8154 | Microsemi Co... | 15.09 $ | 1000 | TVS DIODE |
TVS DIODE 31V 56.4V DO214AB

TVS DIODE 8.5V 13.5V DO219AB

TVS DIODE 350V 690V CASE 5A

TVS DIODE 170V 334V CASE 5A

TVS DIODE 7.02V 12.1V T-18

TVS DIODE 78V 126V DO204AL
