25LC128-I/P

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	128Kb (16K x 8)
Clock Frequency:	10MHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	SPI
Voltage - Supply:	2.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Through Hole
Package / Case:	8-DIP (0.300", 7.62mm)
Supplier Device Package:	8-PDIP
Base Part Number:	25LC128

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Introduction to 25LC128-I/P Memory

The 25LC128-I/P is a serial, 8-pin EEPROM memory device, which stores up to 128 Kbits of information. Manufactured by Microchip Technology Inc., the 25LC128-I/P is widely used in a variety of applications due to its low cost, low-power consumption, and other features.

Features of 25LC128-I/P Memory

The 25LC128-I/P comes in an 8-pin, 300-mil wide, small-outline integrated circuit (SOIC) package. It also features an 8-bit data interface and is capable of operation from a single power supply. The 25LC128-I/P also features a SPI serial interface, which enables it to be used with a wide variety of microcontrollers and processors. The 25LC128-I/P is a non-volatile memory (NVM) device, meaning that it stores data when the power is off or disconnected. This makes it an ideal choice for applications that need to store data when the power is off, such as automotive control systems, industrial controllers, smart cards, point-of-sale systems, and more. The 25LC128-I/P also offers an unlimited write endurance and data retention of up to 10 years.

Application Fields of 25LC128-I/P Memory

The 25LC128-I/P is used in a variety of applications, owing to its low cost, low power consumption, and other features. Here are some of the application fields in which the 25LC128-I/P is commonly used:

• Automotive control systems
• Industrial controllers
• Point-of-sale systems
• Medical devices
• Smart cards
• Consumer electronics
• Security systems
• Telecommunications
• Computer systems

Working Principle of 25LC128-I/P Memory

The 25LC128-I/P is a non-volatile memory (NVM) device, meaning that it stores data when the power is off or disconnected. It uses Fowler-Nordheim Tunneling to write and erase data. To write data to the 25LC128-I/P, a Fowler-Nordheim Tunneling current is created across a thin oxide layer between the control gate and the substrate. This current creates an electric field that causes electrons to tunnel through the oxide, and thus modulate the charge state of the memory cells. To erase the data stored in the 25LC128-I/P, Fowler-Nordheim Tunneling is used again. This time, a higher voltage is applied across the oxide layer, which causes electrons to tunnel through the oxide in the opposite direction. This process causes the memory cells to be reset to their original charge state.

Conclusion

The 25LC128-I/P is a low-cost and low-power 8-pin EEPROM memory device that is used in a variety of applications. It uses Fowler-Nordheim Tunneling to write and erase data, and is capable of operation from a single power supply. Due to its features, the 25LC128-I/P is used in applications such as automotive control systems, industrial controllers, point-of-sale systems, medical devices, smart cards, consumer electronics, security systems, telecommunications, and computer systems.

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