2N3013

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A 2N3013 tends to be an NPN transistor, meaning that the two main terminals, the collector and the emitter, has a polarity that can allow for current to flow from its lower voltage side, which is its collector, to the higher voltage side, which is its emitter. To be more precise, an NPN transistor is a three-terminal, passive device that are formed with two P-type semiconductors and an N-type semiconductor between the two. In this case, the 2N3013 has two P-type semiconductors and a single N-type semiconductor.

When describing the 2N3013, the substrate material is usually silicone based, and it\'s also common that its collector-emitter voltage (which is also known as BVCEO) is around 30 volts. Furthermore, this PNPN type of transistor tends to be able to handle up to 500 mA with a continuous power dissipation of 600 mW at an ambient temperature of 25°C. In addition, the 2N3013 is also able to handle peak collector current up to 800 mA, with a peak power dissipation of 1.2 W.

The 2N3013 is able to operate within a temperature range of -55°C to 150°C, and the forward current transfer ratio (which is also known as DC current gain or hFE) tends to be in scope of between 10 and 100, with a maximum junction temperature of 125°C. In terms of its maximum reverse voltage power, the 2N3013 tends to be able to support between 6 and 10 volts.

As mentioned, the collector-emitter voltage (BVCEO) of the 2N3013 is usually about 30 volts, and its base-emitter voltage (BVEBO) is usually around 5 volts. In addition, its maximum collector-emitter diode voltage is usually about 5.2 volts, and its voltage drop between the base and the emitter tends to be around 0.7 volts. Finally, its DC collector/emitter saturation voltage tends to be around 0.2 volts, which is considered its minimum value.

Since the 2N3013 is an NPN type of transistor, it is used in many applications. For example, it can be used as an amplifier or a switch in many electronic circuits. It is also used in many digital power supplies, such as those used in personal computers and other electronic devices. In addition to that, it is also used in logic gates, flip-flops, power transistors, and logic switches. As such, the 2N3013 is a very versatile transistor that can be used in a wide range of applications.

In terms of its working principle, the 2N3013 operates by controlling the amount of current flowing through it. When a voltage is applied to the base of the transistor, this allows the collector current to flow from its collector to its emitter, and the amount of current that can flow depends on the amount of voltage applied. As such, the current flowing between the collector and the emitter can be controlled by adjusting the voltage applied to the transistor\'s base.

In conclusion, the 2N3013 is a popular NPN type of transistor that is used in a wide variety of applications, including powering digital devices, controlling current flow in logic gates, and for amplifying and switching signals. It is usually able to operate with a wide range of temperature and voltage levels, and can be used to control the amount of current flowing through it by adjusting its base voltage. As such, the 2N3013 is a very versatile transistor that has a wide range of application fields.

The specific data is subject to PDF, and the above content is for reference