Name: 2N3057A
Brand: Microsemi Corporation
SKU: 2N3057A-ND
Price: 6.74 USD
Availability: InStock

Allicdata Part #:	2N3057A-ND
Manufacturer Part#:	2N3057A
Price:	$ 6.74
Product Category:	Discrete Semiconductor Products
Manufacturer:	Microsemi Corporation
Short Description:	TRANS NPN 80V 1A TO-46
More Detail:	Bipolar (BJT) Transistor NPN 80V 1A 500mW Through...
DataSheet:	2N3057A Datasheet/PDF
Quantity:	1000

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$ 6.12883

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Specifications

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 500mA, 10V
Power - Max:	500mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-206AB, TO-46-3 Metal Can
Supplier Device Package:	TO-46-3

Description

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2N3057A is a low-power, low-voltage, high-current amplitude control small signal transistor. It is primarily used for applications such as amplifying an audio signal, oscillator circuits, modulation, switching, and small-signal voltage regulation. It is a member of the silicon-controlled rectifier (SCR) family of transistors and is therefore categorized as a Bipolar Junction Transistor (BJT). The 2N3057A, like other BJTs, functions by controlling the current between two regions or “junctions” of a semiconductor material, typically silicon. BJTs are commonly used for their high current carrying capacity and low input impedance.The 2N3057A is constructed using two P-type and one N-type doped semiconductor material pieces. It is also known as a NPN type transistor, meaning the central (base) region is doped with N-type material and the two outside regions are doped with P type material. The P-type regions are referred to as the “collector” and “emitter” while the N-type region is referred to as the “base.”In operation, current flows in two directions. The current flowing into the base is referred to as the “base current”, and is typically very small. This base current is “injected” into the semiconductor material, allowing current to flow from the collector to the emitter. This current is referred to as the “collector current” and is typically much larger than the base current. The ratio of the collector current to the base current is referred to as the “gain” or “amplification” of the transistor, and ranges from 20 to 200 for the 2N3057A.The gain of the transistor is also affected by the amount of current applied to the emitter (IE), referred to as the “emitter current.” The gain of the transistor decreases as the emitter current increases, a phenomenon referred to as “ Early effect”. As the emitter current is increased, the gain of the transistor decreases, making it more difficult for current to flow from the collector to the emitter. This makes the 2N3057A well-suited for controlling current in low voltage, low current applications such as audio amplification, oscillator circuits, modulation, and switching.In addition to its gain and voltage characteristics, the 2N3057A offers consistent performance over a wide temperature range, making it an excellent choice for applications requiring temperature stable operation. The 2N3057A is also able to handle high pulse currents, making it an excellent choice for use in pulsed applications such as motor control and switching. The low power requirements of the 2N3057A also make it an excellent choice for battery-powered applications. In summary, the 2N3057A is a low-power, low-voltage, high-current amplitude control small signal transistor well suited for audio amplification, oscillator circuits, modulation, switching, and small-signal voltage regulation. It offers consistent performance over a wide temperature range and handles high pulse current. The low power requirements make it well-suited for battery-powered applications, making it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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2N3057A-ND

2N3057A

Discrete Semiconductor Products