Allicdata Part #: | 2N3014-ND |
Manufacturer Part#: |
2N3014 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | NPN HS MED PWR SWITCH |
More Detail: | Bipolar (BJT) Transistor NPN 20V 200mA 350MHz 300m... |
DataSheet: | 2N3014 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 350mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 300nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 30mA, 400mV |
Power - Max: | 300mW |
Frequency - Transition: | 350MHz |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-206AC, TO-52-3 Metal Can |
Supplier Device Package: | TO-52-3 |
Base Part Number: | 2N3014 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
2N3014 is a relatively old type of bipolar junction transistor (BJT) manufactured by NPN technology. It has a small current gain, typically 25-50. It has a guaranteed power dissipation of 1W and a maximum collector-base breakdown voltage (BVcb) of 100V. 2N3014 transistors are ideal for use in moderately high frequency and power applications.
The 2N3014 is commonly used in amplifier circuits as well as switching and RF applications. It is often employed in push-pull amplifier designs as computed amplifiers, sound systems, and frequency modulators. Additionally, they can be used to drive relays or other heavy loads. In some cases, they are used to perform the switching tasks associated with a digital circuit.
The working principle of the 2N3014 NPN transistor is based on the principles of semi-conductor physics. Essentially, when using an NPN transistor, there is an inherent voltage drop across the two junctions of the transistor. This voltage difference, or ‘Vp’, is typically less than 0.6V. When a current passes through the base of the transistor, it creates a voltage difference between the base and the emitter which creates a current flow through the base-emitter junction. This results in electrons from the collector region being attracted to the base region, allowing a much larger current to flow between the collector and the emitter, thus amplifying the signal.
The collector-base junction, on the other hand, also contains a voltage difference, which can significantly affect the performance of the transistor. Generally, the collector-base breakdown voltage, termed ‘BVcb’, should be as high as possible – preferably between 25V and 50V. A higher BVcb ensures that no current flows through the collector-base junction, even when operating at high currents or voltages.
2N3014 transistors are also well-suited to high-frequency applications. They typically have a higher current gain and lower capacitance than transistors manufactured with PNP technology, making them ideal for RF circuits. As mentioned earlier, they are often used in digital circuitry as switching transistors capable of fast switching speeds.
In conclusion, 2N3014 transistors are a reliable and cost-effective option, capable of meeting a wide range of needs. With their small current gain, improved BVcb, and high-frequency capabilities, these BJT transistors are an ideal choice for power and switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
2N3013 | ON Semicondu... | -- | 1000 | NPN HS MED PWR SWITCHBipo... |
2N3014 | ON Semicondu... | 0.0 $ | 1000 | NPN HS MED PWR SWITCHBipo... |
2N3055H | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 60V 15A TO-3Bip... |
2N3055HG | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 60V 15A TO-3Bip... |
CP305-2N3019-CT | Central Semi... | 0.0 $ | 1000 | TRANS NPN HI CURRENT CHIP... |
2N3053A | Central Semi... | 3.37 $ | 1000 | THROUGH-HOLE TRANSISTOR-S... |
2N3055 | Central Semi... | -- | 1000 | THROUGH-HOLE TRANSISTOR-S... |
2N3057A | Microsemi Co... | 6.74 $ | 1000 | TRANS NPN 80V 1A TO-46Bip... |
2N3019S | Microsemi Co... | -- | 1000 | TRANS NPN 80V 1A TO-39Bip... |
2N3053 | Central Semi... | -- | 961 | TRANS NPN 40V 0.7A TO-39B... |
2N3055G | ON Semicondu... | -- | 5355 | TRANS NPN 60V 15A TO3Bipo... |
2N3019 | Microsemi Co... | -- | 309 | TRANS NPN 80V 1A TO-5Bipo... |
2N3055AG | ON Semicondu... | 4.22 $ | 637 | TRANS NPN 60V 15A TO-3Bip... |
CP305-2N3019-CT20 | Central Semi... | 105.51 $ | 25 | TRANS NPN 1=20PCSBipolar ... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
TRANS PNP 140V 1ABipolar (BJT) Transisto...
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...