2N3019

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

2N3019 is a type of bipolar junction transistor (BJT) specifically designed as a low-power, low-noise, medium-frequency amplifier. Developed in the mid-20th century, this transistor was a cornerstone of electronics and circuitry, and it is still widely used today. The basic functioning of the transistor, along with its input-output characteristics and electrical parameters, can be better understood by looking at its application field and working principle.

Application Field of 2N3019

The 2N3019 BJT is a popular choice for low-power and low-noise amplification of weak signals. This transistor has found widespread application in instrumentation and control, audio amplifiers, speech processing, and television receivers. Additionally, it has been used in RF amplifier design and power switches in applications such as cell phone buttons.

Working Principle of 2N3019

A BJT is built around an arrangement of two P-type and one N-type semiconductor material. This arrangement is called the bipolar junction. Current flow can be controlled in one direction, thus resulting in the transistor’s ability to amplify weak signals.

In the 2N3019, the base-emitter path of the bipolar junction aids in controlling the flow of current. The current from the base-emitter path can be amplified and regulated by controlling the current between the collector and the emitter. As such, the 2N3019 operates as an amplifier.

The 2N3019 is quite versatile due to its ability to be driven from constant current or from a voltage source. This means it can drive a load of either current or voltage, making it suitable for a wide range of applications.

The current gain of a 2N3019 is typically between 103 to 103.5. The emitter-base breakdown voltage of the 2N3019 is approximately 9V, while its collector-emitter breakdown voltage is approximately 20V. It has a maximal power dissipation rating of 10W.

Conclusion

The 2N3019 represents a classic example of BJT technology. Although it has passed its peak of popularity, this transistor is still widely used today. It is admired for its low-power, low-noise, and medium-frequency amplifying capabilities. Coupled with its input-output characteristics and electrical parameters, it remains a popular choice for a range of various application fields requiring amplification of weak signals.

The specific data is subject to PDF, and the above content is for reference