2N3053 Allicdata Electronics
Allicdata Part #:

2N3053-ND

Manufacturer Part#:

2N3053

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN 40V 0.7A TO-39
More Detail: Bipolar (BJT) Transistor NPN 40V 700mA 100MHz 5W T...
DataSheet: 2N3053 datasheet2N3053 Datasheet/PDF
Quantity: 961
Stock 961Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 15mA, 150mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
Power - Max: 5W
Frequency - Transition: 100MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39
Description

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The 2N3053 is a silicon NPN power transistor designed for large current and high voltage applications. It is commonly used in high-voltage, high-current switching applications such as motor control, lighting and power supply inverters. The 2N3053 is capable of operating over a -65°C to +200°C temperature range, making it ideal for use in off-shore industrial and military applications. The maximum collector current is rated at 3A and the maximum collector-emitter voltage is 80V. The transistor has an integrated reverse-biased diode, providing protection in flyback transformer applications.

The 2N3053 is a single-bipolar transistor, typically sold in a TO-39 metal can. The Bipolar Junction Transistor (BJT) consists of two diodes, a base and two collector-emitter junctions connected to the base. It is comprised of two PN-junctions that permit current flow through the Collector (C) and the Emitter (E) when the base (B) is forward biased or is receiving current. When the base current is removed, the transistor will cut off and all current will be stopped. This makes the BJT an effective switching device as the Collector-Emitter voltage is controlled by the voltage applied to the base-emitter, allowing for greater control over current to the load.

The 2N3053 is often used as an interface device between digital logic circuits and power supplies. It can be used to control the switching of relays and solenoids, as well as motor speed control. The integrated reverse-biased diode reduces stress on a flyback transformer, providing protection from overvoltage and sparking. Additionally, the transistor can be used in light dimmer circuits, as they offer a high breakdown voltage and low saturation voltage. The device is also used in AC-to-DC power converters and switching regulators.

The 2N3053 is most commonly used in low current, low frequency applications such as lamps, blowers, and servo motors. It can also be used to build amplifier and constant current circuits. The 2N3053 is ideal for use in switching applications such as relays, solenoids, and light dimmers and is designed to provide high current, high voltage operation with low power dissipation.

In summary, the 2N3053 is a silicon NPN power transistor designed for large current and high voltage applications. It is most commonly used in low current, low frequency applications such as lamps, blowers, and servo motors. Additionally, it can be used to control the switching of relays and solenoids, as well as motor speed control. The integrated reverse-biased diode reduces stress on a flyback transformer, providing protection from overvoltage and sparking. In terms of operation, the 2N3053 is a single-bipolar transistor, typically sold in a TO-39 metal can. It is connected to the base and consists of two PN-junctions that permit current flow through the Collector (C) and the Emitter (E) when the base (B) is forward biased or is receiving current.

The specific data is subject to PDF, and the above content is for reference

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