Allicdata Part #: | 2N3055GOS-ND |
Manufacturer Part#: |
2N3055G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 15A TO3 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 15A 2.5MHz 115W T... |
DataSheet: | 2N3055G Datasheet/PDF |
Quantity: | 5355 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 3.3A, 10A |
Current - Collector Cutoff (Max): | 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 4V |
Power - Max: | 115W |
Frequency - Transition: | 2.5MHz |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-204 (TO-3) |
Base Part Number: | 2N3055 |
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The 2N3055G is a medium power NPN general-purpose transistor, produced by Fairchild Semiconductor. It has a maximum Collector-Emitter voltage of 60V and is suitable for applications like regulated power supplies, switching circuits, and amplifiers.
Application Field
The 2N3055G transistor is widely used in various projects requiring NPN BJT transistors, such as in power supplies, amplifier designs, switching circuits, and more. It can be used everywhere a general-purpose transistor, such as an NPN transistor with 60V Collector-Emitter voltage, is required.
The 2N3055G is ideal for projects involving power supply circuits, as its maximum Collector-Emitter voltage of 60V allows it to build high-powered power supplies efficiently and with excellent stability. It can also be used in audio amplifier designs, as it can amplify audio signals with excellent clarity and clarity.
The 2N3055G can also be used as a switching transistor for DC/AC circuits. Its ability to handle up to 15 Amperes makes it an ideal transistor for such switching operations. Furthermore, it can also act as a general-purpose amplifier transistor, as it can amplify and amplify signals with an excellent gain of 30dB.
Working Principle
The 2N3055G is an NPN transistor, with the “N” in NPN standing for Negative, indicating that it is an N-type channel device. This means that the channel between the Collector and the Emitter is made up of negative-type doping material, allowing the majority of current to flow from the Collector towards the Emitter.
The transistor has three terminals; the Base, Collector, and Emitter. The Base is the input terminal, and the Collector and Emitter are the output terminals. When the Base voltage is increased, a small current flows into the transistor, causing it to open up its channel and allow current to flow from the Collector to the Emitter. When current flows from the Collector to the Emitter, it can be used to carry out a variety of tasks, such as amplification and switching.
The 2N3055G transistor has a maximum Collector-Emitter voltage of 60V and a Collector-Base voltage of 100V, meaning it can handle loads up to 15 Amperes. It also has a maximum power dissipation of 25W and a gain of 30dB, making it suitable for a variety of applications.
Overall, the 2N3055G is a widely used medium-power NPN general-purpose transistor, suitable for applications like regulated power supplies, switching circuits, audio amplifiers, and more. It has a maximum Collector-Emitter voltage of 60V and a maximum power dissipation of 25W, allowing it to handle up to 15 Amperes across its Collector-Emitter terminals. It also has a gain of 30dB, making it an excellent amplifier transistor.
The specific data is subject to PDF, and the above content is for reference
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