Allicdata Part #: | 2N333ALT2-ND |
Manufacturer Part#: |
2N333ALT2 |
Price: | $ 40.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | NPN POWER SILICON TRANSISTORS |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2N333ALT2 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 36.79730 |
Series: | * |
Part Status: | Active |
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A 2N333ALT2 is a bipolar junction transistor and the type of transistor is single. It is intended for use in high voltage circuits, general amplifier and switching applications. The device offers low leakage current, low power sourcing and low voltage drop, which makes it a more efficient component in most applications.
The 2N333ALT2 has a low voltage rating of 30V and a breakdown voltage of 2.7V. It features a low output resistance of 2KΩ, a fast propagation delay (15ns typical) and a maximum power dissipation of 1W. The device is rated to operate between −55°C and 150°C and it has a storage temperature −60°C and 150°C.
The 2N333ALT2’s ability to switch an electrical signal makes it suitable for high voltage and low power electronics projects. An example application would include powering a small motor in an astronomical telescope device. In this application, the transistor can switch the electrical signal from the battery to the motor and ensure the device operates reliably and with minimal power dissipation. The device can also be used in audio amplifiers, RF amplifiers and switching/processing circuits.
The 2N333ALT2’s working principle is based on the flow of electrons within the transistor. The base of the transistor is the controlling region that allows current to flow from the emitter to the collector. The current is controlled by the base current which is controlled by the current sent from the external circuit. By controlling the current flow, the output current of the transistor can be controlled. This is the primary role of the 2N333ALT2 in electronics applications.
In summary, the 2N333ALT2 is a single bipolar junction transistor designed for general amplifier, high voltage and switching applications. The low voltage rating, fast propagation delay and low output resistance make it suitable for most low power-dependent circuit designs. The device operates based on the flow of electrons within the base, emitter and collector and can be used to control the output current of the transistor.
The specific data is subject to PDF, and the above content is for reference
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