Allicdata Part #: | 2N335LT2-ND |
Manufacturer Part#: |
2N335LT2 |
Price: | $ 40.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | NPN POWER SILICON TRANSISTORS |
More Detail: | Bipolar (BJT) Transistor |
DataSheet: | 2N335LT2 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 36.79730 |
Series: | * |
Part Status: | Active |
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The 2N335LT2 is a type of transistor categorized under Bipolar Junction Transistors (BJTs) and is a type of single transistor. This article will explain the application field of the 2N335LT2 as well as its working principle.
Application Field of the 2N335LT2 Transistor
The 2N335LT2 is used in a variety of electronic circuits, including but not limited to those used in power supplies, amplifiers, and other signal processing circuits. The high input impedance and low output impedance of this type of transistor make it an ideal choice for use in these types of circuits.
The 2N335LT2 is also commonly used as a switch in applications where a high current must be switched on or off. This is due to its ability to handle up to 5.5 amperes of current, making it suitable for most application needs. Additionally, the 2N335LT2 is highly reliable, making it a good choice for circuits that require continuity.
Due to its high reliability and cost effectiveness, the 2N335LT2 is also used extensively in motor control and other motor related applications. It is also frequently used in industrial and automotive applications, as its rugged construction makes it suitable for use in these more demanding environments.
Working Principle of the 2N335LT2 Transistor
The 2N335LT2 is classified as a type of BJT, which stands for Bipolar Junction Transistor. This type of transistor utilizes two layers of semiconductor material to create its active region. This region is known as the base-collector junction.
When current is applied to the base of this junction, electrons are injected into the base. These electrons are then attracted to the collector, creating a current through the collector-base junction. This current is then used to control the output current, which is connected to the emitter terminal.
The 2N335LT2 also uses a third layer of semiconductor material to create its base-emitter junction. This is where most of the current is controlled, as the majority of the charge carriers that make up the current are injected here. At the emitter, the majority of the current is then released into the external circuit.
Once the current has been released at the emitter, the electrical characteristics of the device can be altered. This is done by altering the voltage applied to the base-collector junction, as well as the current that flows through the collector-emitter junction. By controlling these parameters, the 2N335LT2 can be used for a variety of applications.
Conclusion
The 2N335LT2 is an useful type of single transistor, categorized under Bipolar Junction Transistors (BJTs). Its application field is extensive, and its working principle is one of the main reasons why it is commonly used in power supplies, amplifiers, motor control, and other electronic circuits. By understanding how this type of transistor works, it is easy to see how it can be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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