Allicdata Part #: | 1086-20789-ND |
Manufacturer Part#: |
2N336 |
Price: | $ 44.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS NPN 45V 10MA |
More Detail: | Bipolar (BJT) Transistor Through Hole TO-5 |
DataSheet: | 2N336 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 40.30180 |
Series: | * |
Packaging: | Bulk |
Part Status: | Active |
Mounting Type: | Through Hole |
Package / Case: | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: | TO-5 |
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A 2N336 is a general purpose silicon Planar NPN Transistor with a low current and low voltage capability. It is a single Bipolar junction Transistor (BJT). This device is commonly used to amplify current, provide switching, impedance matching, and signall conditioning.
When a base current is applied, current will flow from emitter to collector as controlled by the amount of base current. The 2N336 has a DC current gain that typically ranges from 100 to 500 with a collector emitter voltage (VCE) of 3-5 volts.
The 2N336 can be used in several different application areas. It can be used as a signall amplifier in Audio Frequency (AF), Low Frequency (LF) amplifier circuits due to its excellent linearity, moderate gain, and relatively low power consumption. It can also be used as a signal conditioning device in various audio applications, due to its high signal/noise ratio.
In power switching applications, an NPN transistor acts as a switch due to its low on resistance. It can control larger currents at higher voltages, allowing for greater efficiency in switching applications.The 2N336 can also be used in a Low Noise Amplifier (LNA) circuit due to its low current consumption and low noise characteristics.
The working principle of a Bipolar Junction Transistor (BJT) is based upon the movement of majority carriers. In an NPN transistor, when a base current is applied, electrons in the emitter region will be attracted towards the base region. These electrons then become minority carriers and then form the base current. This base current then causes the majority carriers (holes) in the base region to move towards the collector region, thereby forming the collector current.
This collector current then causes a potential difference to be developed between the emitter and the collector. This potential difference is called the Collector-Emitter Voltage (VCE). When VCE reaches a certain threshold, the majority carriers in the base region will become depleted, resulting in a decrease in the collector current. In this way, the Collector-Emitter Voltage determines the amount of current which can flow from the collector to the emitter.
The 2N336 has a VCE range of 3-5 Volts, which makes it suitable for a variety of applications such as audio amplifiers, low noise amplifiers, signal conditioning, power switching applications, etc.
In summary, the 2N336 is a general purpose silicon Planar NPN Transistor with a low current and low voltage capability. It is a single Bipolar Junction Transistor primarily used in amplifiers, power switching applications, signal conditioning, and low-noise amplifiers due to its low current consumption and linearity. The Collector-Emitter Voltage (VCE) determines the amount of current which can flow from the collector to the emitter and is typically in the range of 3-5 Volts.
The specific data is subject to PDF, and the above content is for reference
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