Allicdata Part #: | 2N3390_D75Z-ND |
Manufacturer Part#: |
2N3390_D75Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 25V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 500mA 625mW Thro... |
DataSheet: | 2N3390_D75Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 400 @ 2mA, 4.5V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N3390 |
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The 2N3390_D75Z is a type of bipolar junction transistor (BJT), which belongs to the category of single transistors. As a component of an electronic device, the 2N3390_D75Z is designed with a specific purpose and its functions must be known in order to understand how it can best be used. This article will examine the application field and the working principle of the 2N3390_D75Z, in order to gain an understanding of this type of transistor.
Application Field
The 2N3390_D75Z can be applied in a number of areas. It provides low to medium current gain in audio amplifier circuits, and can be used as a preamplifier or a driver. It is also suitable for small-signal switching applications such as switching radio channels or arming/disarming alarms, as well as for pulse width modulation. Additionally, it is utilized in the amplification of instrumentation signals and video signals for imaging systems.
Working Principle
The bipolar junction transistor (BJT) is a three-terminal active device which is controlled by the input current. The BJT consists of two PN junctions which are connected to form a sandwich structure. The BJT can be used in switching and amplifying applications. The three terminals of the 2N3390_D75Z are the base, emitter, and collector. The base acts as an input control to the transistor, while the emitter carries the input current, and the collector carries the output current. The input current flows from the base to the emitter and the output current flows from the collector to the emitter. The input and output currents both depend on the current gain (hfe) of the transistor.
The transistor is in saturation phase when the current gain of the 2N3390_D75Z is at its peak. This is when the current gain is high, and the voltage is low. In this state, the transistor is said to be saturated because it is operating in the full-on or full-off state. In cut-off mode, the current gain is low and the voltage is high. In this state, the transistor is operating in the off-state. When the base and emitter voltages are equal, the transistor is in the linear mode. This is when the transistor is operating in the linear region, with the current flow depending on the voltage difference between the base and emitter.
The 2N3390_D75Z is versatile and can be used in a variety of applications. Its wide range of current gain, low cost and small size make it a popular choice for many applications that require switching or amplification.
The specific data is subject to PDF, and the above content is for reference
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