2N336ALT2 Allicdata Electronics
Allicdata Part #:

2N336ALT2-ND

Manufacturer Part#:

2N336ALT2

Price: $ 40.48
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: NPN POWER SILICON TRANSISTORS
More Detail: Bipolar (BJT) Transistor
DataSheet: 2N336ALT2 datasheet2N336ALT2 Datasheet/PDF
Quantity: 1000
100 +: $ 36.79730
Stock 1000Can Ship Immediately
$ 40.48
Specifications
Series: *
Part Status: Active
Description

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2N336ALT2 application field and working principle

Bipolar transistors are widely used in commercial and industrial products and comprise a part of the electronics pie. Specifically, bipolar transistors are available in many different types for various applications. One of the advantages of these transistors is that they can switch very quickly from one state to another in a very short period of time. One popular bipolar transistor is the 2N336ALT2.

This device has a variety of uses and can be found in many electronics devises including audio amplifiers, radio receivers, switching regulators and miniature switching circuits. The 2N336ALT2 is capable of numerous applications due to its simplicity and consistency. This transistor utilizes the NPN type of configuration, meaning it has an emitter, base and collector.

2N336ALT2 Configuration

The 2N336ALT2 has an NPN type of configuration, meaning it utilizes an emitter, base and collector. The emitter is the connection where electrons enter the device, and the collector is the terminal where the electrons leave the device. The base connection is the link responsible for controlling the current flow, and it’s controlled by various voltages.

2N336ALT2 Working Principle

When a small positive voltage is applied to the base, it increases the current flow between the emitter and collector terminals. This current flow is called minority carrier injection. As a result, a large current begins to flow from the collector to the emitter. This phenomenon is known as current gain. The current gain of this particular transistor is quite high, typically greater than 100.

When the base voltage is removed, then the current flow between the emitter and collector stops. This phenomenon is known as cutoff. A few more terms related to bipolar transistors includes saturation, which is when both the emitter and collector terminals of a transistor are in the “on” state, and the output current is limited only by the external resistance between the two terminals. This transistor is also capable of “holding” a signal, meaning it can hold the voltage at a certain level for a certain period of time.

2N336ALT2 Early and Reverse Characteristics

Early voltage is the voltage at which the collector current is one-tenth the maximum current. The reverse current of a transistor is the current that flows from the collector to the emitter (in the opposite direction) through the reverse-connected protection diode. The 2N336ALT2 is a common base transistor, meaning the emitter and collector leads are reverse biased. However, the 2N336ALT2 can also operate in a grounded emitter configuration. This configuration enables the device to have an extremely low base-emitter voltage, making it ideal for low voltage applications.

2N336ALT2 Considerations

When selecting a transistor for a particular application, there are several factors that must be considered. These factors include the amplifying characteristics, protective diode, heat dissipation, mounting method and cost. The 2N336ALT2 has excellent amplifying characteristics, including a high gain, high current gain and low-noise operation. It also has a protective diode that prevents excessive current from flowing from the collector to the emitter. In addition, it is also capable of dissipating heat quickly, making it an excellent choice for high-power applications. Furthermore, the 2N336ALT2 is available in a variety of mounting methods and is usually very inexpensive.

Conclusion

The 2N336ALT2 is a popular bipolar transistor. It has a variety of uses, including audio amplifiers, radio receivers and miniature switching circuits. This transistor has an NPN type of configuration, meaning it has an emitter, base and collector. When a small positive voltage is applied to the base, it increases the current flow between the emitter and collector terminals. This current flow is known as minority carrier injection and is responsible for the current gain of the device. In addition, the device has an excellent amplifying characteristics and is capable of dissipating heat quickly. Furthermore, it is available in a variety of mounting methods and is usually very inexpensive.

The specific data is subject to PDF, and the above content is for reference

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