2N335

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The 2N335 is a silicon NPN transistor commonly used in the design of amplifiers, oscillators, and other electronic applications. It is a member of the bipolar junction transistor (BJT) family and is often referred to as a single BJT transistor.

The 2N335 is primarily used for general purpose applications such as switching, amplifying, and for use in oscillators. It can also be used for high frequency switching, saturation amplifiers, and low frequency amplifiers. The 2N335 has an amplification factor, or current gain, of between 90 and 140.

The structure of the 2N335 is one of the distinguishing factors that sets it apart from other BJT transistors. It has a three-layer semiconductor structure, consisting of two layers of doped silicone and a third layer of undoped silicone, or "buried layer". This buried layer is what allows the transistor to work with much higher currents, making it ideal for power applications.

The 2N335 is a popular choice for amplifiers because it has a very large power rating, meaning it can handle large currents and high voltages with ease. The transistor also has a low noise figure, so noise generated by the amplifier is low. Additionally, the 2N335 is very stable, making it suitable for use in applications where stability is important.

The working principle of the 2N335 transistor is very simple. It consists of two junctions; an emitter–base junction and a collector–base junction. These junctions are formed by the doped silicon layers and the "buried layer". The current flow between these junctions is based on the PN junction diode principle. When the base terminal is provided with a positive voltage, electrons flow from the emitter to the collector and then out of the collector. This process is called forward-biased conduction, and it is how the transistor amplifies the voltage and current.

The 2N335 is an extremely versatile transistor that is well-suited for a variety of applications, such as amplifiers, power switches, and oscillators. Its low noise figure and high current rating make it an ideal choice for high power applications. Additionally, the three-layer structure of the 2N335 provides excellent stability, making it suitable for use in precision circuits and applications where stability is a must. As such, the 2N335 is an integral part of many electronics designs, and is likely to remain so for many years to come.

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