2N3391A

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	--
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	250 @ 2mA, 4.5V
Frequency - Transition:	120MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92

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2N3391A Application Field and Working Principle

The 2N3391A is a NPN bipolar junction transistor (BJT) designed for use in low-level, high-gain amplification applications. It has a maximum collector current (Ic) of up to 600mA, a maximum power dissipation (Pd) of up to 0.5W, and a maximum voltage rating (Vceo) of up to 30V. It is made up of an NPN structure with three terminals, the base, the collector and the emitter.

The Application Field of 2N3391A

The 2N3391A is widely used in switched-mode power supplies, high-side switch applications, amplifier circuits, transistor switch circuits, driver circuits, and any low-level, high-gain amplification applications. It is commonly used in circuits that require low noise, low operating current, and high switching speeds. The 2N3391A is also suitable for audio applications such as linear pre-amps, mixers and line drivers.

The Working Principle of 2N3391A

The 2N3391A is an NPN bipolar junction transistor (BJT) and the basic principle of operation is based on the fact that, when a small current is applied to the base terminal, a larger current flows between the collector and the emitter terminals. This is known as the "amplification" property of the transistor. When a voltage is applied to the base of the transistor, it creates a small electric field which attracts charges (electrons or holes) from the emitter to the collector. This increases the current flowing from the collector to the emitter. This current flow is larger than the current entering the base and this is the principle of amplification. The amount of current flowing from collector to emitter depends on the amount of current entering the base, and this relationship is known as the "transistor\'s current gain". It is important to note that the current gain of the 2N3391A ranges from 70 to 200. The 2N3391A has a low noise figure, which is an important indicator of its suitability for low noise applications. The 2N3391A also has a high switching speed, which is important in applications where fast switching speeds are required. The 2N3391A is also designed to operate over a wide range of temperatures and is capable of operating over the -55°C to +150°C range. In addition, the 2N3391A has a low saturation voltage, which is important in applications where low voltage drop is required. The 2N3391A is also suitable for applications that require high current-transfer ratios. This is because the base terminals of the transistor plays a key role in controlling the flow of current from the collector to the emitter. As the current entering the base increases, so does the current flowing from the collector to the emitter. The 2N3391A is designed to provide a very high current-transfer ratio (often as high as 200) making it suitable for applications where high current-transfer ratios are required. Finally, the 2N3391A can be used in a wide range of circuits, from low-level to high-gain amplification applications. Its low noise figure and high switching speeds make it suitable for applications that require low noise and high switching speeds. Moreover, its low saturation voltage and high current-transfer ratios make it suitable for applications that require low voltage-drop and high current-transfer ratios. In conclusion, the 2N3391A is an NPN bipolar junction transistor that is suitable for a wide range of amplification applications. It has a low noise figure and high switching speeds, making it suitable for low noise, high switching speed applications. In addition, its low saturation voltage and high current-transfer ratios make it suitable for applications that require low voltage-drop and high current-transfer ratios.

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