2N3663

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N3663 is a type of Bipolar Junction Transistor (BJT). It is classified as an RF transistor and is used in a variety of applications such as radio frequency (RF) transmitters, receivers, and amplifiers. The transistor is a three-terminal device and is composed of two doped regions of semiconductor material, called the emitter and the collector.

The 2N3663 has a PNP type construction and hence is used in PNP applications. This means that the + charge flows in and the - charge flow out. The transistor has an epitaxial silicon construction. The base of the transistor is the control element, and it is also the junction common to the emitter and collector. The base and collector are connected through structure’s integrated electrodes, which help to provide charge carriers with the maximum current gain.

The 2N3663 transistor has excellent electrical characteristics such as low noise, high gain, and low collector-emitter saturation. These characteristics make the transistor ideal for use in RF applications where noise is a factor. It also has a high maximum frequency (fT) of 95 GHz and a maximum power (dissipation) of 60 mW. Furthermore, the transistor has a wide range of operating temperatures (-55°C to +200°C), making it suitable for operation in extreme temperature environments. In addition, the 2N3663 offers excellent thermal stability even in high temperatures.

The working principle of the 2N3663 is quite simple. The base region is charged with electrons, and when a positive voltage is applied to the emitter region, the electrons are attracted to it. This causes the collector current to flow, and as the collector current increases, the transistor amplifies it. Thus, the transistor acts as an amplifier in RF applications.

The 2N3663 can be used in many different types of RF applications. It can be used in high frequency (HF) and ultra-high frequency (UHF) amplifier circuits, RF low noise amplifiers, preamplifiers, receivers, and oscillators. It can also be used as a switch. The transistor is quite versatile and can be used in a wide range of applications.

The 2N3663 is a powerful transistor which is designed for use in high frequency applications. It has excellent electrical characteristics such as low noise, high gain, and excellent thermal stability, which make it ideal for RF applications. Its simple working principle makes it easy to understand and use in different types of circuits. The 2N3663 can be used in a variety of applications, from amplifiers and preamplifiers to switches, oscillators, and receivers. It is a versatile transistor which can be used in a wide range of RF applications.

The specific data is subject to PDF, and the above content is for reference