Allicdata Part #: | 1086-20879-ND |
Manufacturer Part#: |
2N3636 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 175V 1A |
More Detail: | Bipolar (BJT) Transistor PNP 175V 1A 1W Through H... |
DataSheet: | 2N3636 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 175V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 50mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 |
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2N3636 is a bipolar junction transistor (BJT) commonly used as a low noise RF amplifier within transistor radios and other audio applications. This transistor is an NPN amplifier and is in a TO-18 package. It has a high frequency current gain (hfe) of 100 and a collector-emitter saturation voltage of Vce(sat) of 0.2V, which makes it ideal for low voltage audio and RF amplification.
In basic terms, a bipolar junction transistor (BJT) is a semiconductor device formed from two PN junctions. Two BJT terminals referred to as the base, collector, and emitter are located in between two regions of the PN junction. Current flows through the base-collector junction and is amplified in the emitter-base junction. Proper current, temperature, and voltage ratings are needed for proper BJT operation.
The 2N3636 is typically used for analog audio amplification and RF applications. It is frequently used to build low noise RF amplifiers, low power audio amplifiers, high frequency amplifiers, and other amplifiers and switch circuits. In audio amplifiers, it provides good gain levels in the 60-100MHz range. As a result, it finds its use in gadgets like guitar amplifiers and FM tuners.
2N3636 is a single BJT transistor, which has a unique working principle. It works based on the PN junction between the two regions of the semiconductor device. Electrons flow in and out of the base-collector junction and are then amplified in the emitter-base junction. Its current gain (hfe) is 100, which makes this transistor suitable for low voltage audio and RF amplification.
The most common application for the 2N3636 is in the construction of low noise RF amplifiers. It is widely used in transistor radios and other audio applications due to its low noise, low voltage, and high frequency characteristics. It is also used in guitar amplifiers and FM tuners, as it provides good gain levels in the 60-100MHz range.
In conclusion, the 2N3636 is a single BJT transistor commonly used as a low noise RF amplifier within transistor radios and other audio applications. It is ideal for low voltage audio and RF amplification, and is used for building low noise RF amplifiers, low power audio amplifiers, high frequency amplifiers, and other amplifiers and switch circuits. Furthermore, it provides good gain levels in the 60-100 MHz range, and is frequently used in guitar amplifiers and FM tuners.
The specific data is subject to PDF, and the above content is for reference
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