2N3640 Allicdata Electronics
Allicdata Part #:

2N3640-ND

Manufacturer Part#:

2N3640

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANSISTOR PNP TO-106
More Detail: Bipolar (BJT) Transistor PNP 12V 500MHz Through ...
DataSheet: 2N3640 datasheet2N3640 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 300mV
Frequency - Transition: 500MHz
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-106-3 Domed
Supplier Device Package: TO-106
Description

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The 2N3640 is a bipolar transistor in theTO-39 package. It is used primarily in consumer electronics and radio frequency (RF) applications.

The 2N3640 is usually employed as an amplifier, switch or oscillator, as well as other uses. It is can be used in a variety of analog and digital applications. It has an operating voltage range from -45 to +45 volts. It has a relatively high gain and can handle a current of up to 600 mA.

The 2N3640 has a maximum frequency of 500 MHz. It is also capable of producing a high-voltage output. Additionally, it has excellent thermal-sensitive properties that enable it to remain stable under varying temperatures.

The 2N3640 is based on a bipolar junction transistor (BJT). A BJT consists of three layers of semiconductor material; an emitter, a base, and a collector. The emitter is an n-type layer, with the base being a p-type layer, while the collector is n-type. The design of the BJT causes a “depletion region” at the junction between the emitter and the base. This “depletion region” is what allows the BJT to control the current flow from the collector, to the emitter.

The 2N3640’s working principle is based on the idea that current flows from the collector to the emitter, but is only allowed to do so if the base has the correct potential difference. The potential difference across the base-emitter junction is called the forward bias, and it is this potential difference that allows current to flow from the collector to the emitter. By increasing the forward bias, more current can be allowed to pass from the collector to the emitter. Conversely, by decreasing the forward bias, less current can be allowed to pass.

The 2N3640 is similar in function to other single-junction field-effect transistors (FET), but is more efficient and has a higher gain. Its versatility, performance, and cost have made the 2N3640 one of the most popular transistors in the electronics industry. It is used in a variety of applications, such as amplifiers, switches, and oscillators. It is suitable for use in analog and digital designs.

The 2N3640 is a reliable and cost-effective solution for a wide range of applications. Its versatility, performance, and cost-effectiveness make it a popular choice for a wide range of applications. For example, it can be used as an amplifier, switch, or oscillator and is suitable for both analog and digital designs. Its high gain and wide operating voltage range makes it an excellent choice for radio frequency (RF) applications, while its thermal-sensitive properties make it suitable for thermal management solutions.

The specific data is subject to PDF, and the above content is for reference

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