2N3635UB Allicdata Electronics
Allicdata Part #:

1086-20875-ND

Manufacturer Part#:

2N3635UB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 140V 1A
More Detail: Bipolar (BJT) Transistor PNP 140V 1A 1.5W Surface...
DataSheet: 2N3635UB datasheet2N3635UB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1.5W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: 3-SMD
Description

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The 2N3635UB is a PNP Bipolar junction transistor (BJT). Its basic components are a collector, emitter, and base. Bipolar transistors are composed of two different types of semiconductor material, either NPN or PNP, which are sandwiched together to form a junction structure. BJTs are classed as current-controlled devices as they can be used to amplify and switch both AC and DC signals. 2N3635UB transistors have a wide range of applications and can be used in a variety of circuits and systems.

2N3635UB transistors are used mainly for low power amplification and switching applications. Examples of applications for the 2N3635UB transistor include amplifiers for direct current and low frequency signals, radio frequency (RF) amplifiers and oscillators, pre-driver circuits, multiplexers, demultiplexers, audio and video amplifiers, digital-to-analog and analog-to-digital converters, timers and more.

The working principle of a 2N3635UB transistor is based on the stability of the junction between the collector and emitter. When the collector voltage is increased, current flows through the device and directly proportional to the voltage applied; this is referred to as linear amplification. Moreover, the current gain of the transistor, hFE, is related to the collector current and the base current; when the base current is increased, the collector current is proportionally increased. The hFE of the 2N3635UB transistor can be adjusted to amplify different signals.

The 2N3635UB transistor is designed to operate over a wide range of temperatures, from -65 °C to +150 °C. It also uses an NPN transistor collector with a PNP transistor emitter allows for a low base-emitter saturation voltage. In addition, the 2N3635UB has a low-voltage gain and a high-frequency gain of up to 300 MHz. Furthermore, the 2N3635UB has a wide operating supply voltage range from 2V to 18V.

The combination of the wide operating temperature range and the high-frequency gain of the 2N3635UB transistor makes it ideal for low-power amplification and switching applications. In addition, the low base-emitter saturation voltage and supply voltage range allow the device to be used in a wide range of circumstances. Furthermore, the adjustable hFE of the 2N3635UB allows it to be used in many circuit topologies.

In conclusion, the 2N3635UB transistor is a versatile device with many applications and can be used in both AC and DC circuits. Its wide temperature range, adjustable hFE, and low base-emitter saturation voltage make it ideal for amplifying and switching both low and high frequencies. Its wide supply voltage range gives it flexibility in many circuit designs.

The specific data is subject to PDF, and the above content is for reference

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