Allicdata Part #: | 1086-20891-ND |
Manufacturer Part#: |
2N3637L |
Price: | $ 9.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS PNP 175V 1A |
More Detail: | Bipolar (BJT) Transistor PNP 175V 1A 1W Through H... |
DataSheet: | 2N3637L Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 8.43682 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 175V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 50mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AA, TO-5-3 Metal Can |
Supplier Device Package: | TO-5 |
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The transistors are an electronic component used to control currents and to amplify signals. The most common type is the Bipolar Junction Transistor (BJT) which is a semiconductor device consisting of three terminals. It has two junctions which can be either PN junction or NPN junction. One of the most commonly used BJT is the 2N3637L, which is a general-purpose NPN BJT. It has a maximum collector current of 500 mA and a maximum power dissipation of 625 mW.
The 2N3637L application field and working principle are quite simple and straightforward. It is used in a wide variety of applications such as amplifiers, pre-amps, and switching circuits. Its working principle is based on the theory of current flow, where a current is generated in the base and it is amplified in the collector. This current is carried by electrons across the base-emitter junction. The base-collector junction is reverse-biased, which means that electrons flow out of the collector and back into the base.
The current gain of the 2N3637L transistor is defined as the ratio between collector current and base current, which is also called the hFE parameter. It usually has a value of 200-400, meaning that the collector current will be 200-400 times the base current. As the base current increases, the collector current also increases. This increase in the collector current produces a voltage drop across the collector-emitter junction, which can be used to power other electrical components.
The 2N3637L is also widely used for switching applications, since it acts as a fast switch when there is a high current flow in the base. When the base-emitter junction is forward biased, the collector-emitter junction is reverse biased and the transistor acts as an open switch allowing the current to flow freely from the collector to the emitter. When the base-emitter junction is reverse biased, the collector-emitter junction is forward biased and the transistor acts as a closed switch, meaning that current cannot flow from the collector to the emitter.
In summary, the 2N3637L transistor is an NPN type BJT which is used in a variety of applications such as amplifiers, pre-amps, and switching circuits. Its current gain is defined as the ratio between collector current and base current, which usually has a value of 200-400. It is also widely used for switching applications because it acts as a fast switch when there is a high current flow in the base.
The specific data is subject to PDF, and the above content is for reference
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