2N3637 Allicdata Electronics
Allicdata Part #:

2N3637-ND

Manufacturer Part#:

2N3637

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: NPN POWER SILICON TRANSISTORS
More Detail: Bipolar (BJT) Transistor
DataSheet: 2N3637 datasheet2N3637 Datasheet/PDF
Quantity: 1234
Stock 1234Can Ship Immediately
Specifications
Series: *
Part Status: Active
Description

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The 2N3637 is a high-power NPN transistor that is considered to be a general-purpose type. It is compatible with power amplifiers and high-speed switch-mode power supplies. It can handle an operating temperature range of -55 degrees Celsius to +150 degrees Celsius. The 2N3637 is a single complementary silicon power transistor in a TO-92 package. It provides reliability and outstanding performance.

2N3637 Application Field

The 2N3637 can be used for various applications such as audio amplifiers, motor drivers, power supplies, and H-bridges. It is suitable for linear and switching applications. The 2N3637 provides stable power at high speeds and high currents. A few popular applications of the 2N3637 are motor control systems, LED lighting, LED drivers, and automotive applications.

2N3637 Working Principle

The 2N3637 is a bipolar junction transistor (BJT) consisting of three layers of semiconductor material that form a channel region. It acts as a current amplifier and provides electronic gain. It is capable of amplifying current by as much as 1000 times. It works on the principle of current amplification, which is the ratio of output current to input current. The input current is applied to the base while the output current is collected at the emitter. The amplifier signal is observed at the collector end. The current gain of the 2N3637 is between 65 to 200 and the base to emitter saturation voltage is 5V up to 0.6A.

The 2N3637 works on the principle of a PNP transistor with an inverted NPN transistor application. In this, the base and collector junction of the 2N3637 is forward biased, whereas the emitter junction is reverse biased. This makes it an ideal application for electrical circuits as it helps to conduct current in one direction and block current in the opposite direction. This allows for the precise control of current.

Conclusion

The 2N3637 is a high-power NPN transistor which is suitable for general purpose applications, linear and switching power supplies. It has a wide temperature range, a maximum power dissipation of 1W, and a gain of up to 200. It is also used in motor control systems, LED lighting, and automotive applications. The 2N3637 works on the principle of current amplification, in which it amplifies current by up to 1000 times. It is a PNP transistor with an inverted NPN transistor application, allowing for precise control of current.

The specific data is subject to PDF, and the above content is for reference

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