2N3635L Allicdata Electronics
Allicdata Part #:

1086-20871-ND

Manufacturer Part#:

2N3635L

Price: $ 9.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS PNP 140V 1A
More Detail: Bipolar (BJT) Transistor PNP 140V 1A 1W Through H...
DataSheet: 2N3635L datasheet2N3635L Datasheet/PDF
Quantity: 1000
100 +: $ 8.43682
Stock 1000Can Ship Immediately
$ 9.28
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 140V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5
Description

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The 2N3635L is a great example of a single bipolar junction transistor. It is used in a variety of applications, and understanding its working principle can provide greater insight into how transistors can be used in circuits.

Bipolar junction transistors (BJTs) are three-terminal solid-state devices composed of two pn-junctions, two base-collector junctions, and one base-emitter junction. Specifically, the 2N3635L is a high-gain, NPN, low-noise preamplifier transistor. It is used in a range of applications, including IF and RF amplifiers, signal amplifiers, and low-frequency oscillators.

When these transistors are used as amplifiers, they take in a signal on the emitter and amplify it, then output it on the collector. This is done by enacting a negative feedback loop. The signal is received on the emitter, and then passes through the base-emitter junction. If a voltage is applied to the base, this will create an electric field, which will cause current to flow. This process is known as the \'Early Effect\' which amplifies the signal on the collector.

The amplification process of a BJT can be affected by varying the current on the base. This is known as the current gain, or \'hFE\'. The higher the current, the greater the amplification. This is why the 2N3635L is ideal for efficient amplification, as it has a high hFE value.

The 2N3635L also has a low noise preamplification, which means that it is capable of eliminating any unwanted external signals, making it the perfect choice for sensitive circuits. It is also much smaller and more affordable than many other transistors, making it an excellent choice for many applications.

Overall, the 2N3635L is a great example of a single bipolar junction transistor, and understanding its working principle can provide greater insight into how transistors can be used in circuits. It is used in a range of applications, including IF and RF amplifiers, signal amplifiers, and low-frequency oscillators. Its high current gain and low noise preamplification make it an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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