Allicdata Part #: | 2N3906RLRAOSCT-ND |
Manufacturer Part#: |
2N3906RLRA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 0.2A TO92 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625m... |
DataSheet: | 2N3906RLRA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N3906 |
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The 2N3906RLRA is a type of transistor that falls under the category of Bipolar Junction Transistor (BJT), with a single configuration. This general-purpose NPN transistor is designed to function within a wide range of applications and provides a superior voltage and power gain over other devices in the same category.
The 2N3906RLRA is typically used for general switching and amplifier applications, providing an ideal solution in those electronics projects which require both a low and high signal transmission. This device can be used in conjunction with both signal and power transistors, and work in a variety of configurations. It is able to handle currents up to several Amps, and is popular for simple amplification stages.
The 2N3906RLRA operates in two main ways: one being the biasing of the base region, and the other being the activation of the collector and emitter regions. To determine if a biasing current needs to be applied, a current flow needs to be established between the collector and the base of the transistor. This current will determine the voltage that is necessary in order to activate the collector and emitter regions.
Once the correct biasing current and voltage are applied, the collector and emitter regions then become activated. This activation occurs when electrons from the emitter region pass through the base region and into the collector region. This process is known as a minority carrier injection, and is how the 2N3906RLRA is able to amplify the applied voltage.
When the voltage is increased from the base region, a similar increase in current is noticed from the collector region. This increase in current is due to the increase in the number of electrons which are able to pass through the transistor. The exact voltage is dependent on the current flow, with a larger current allowing the base region to reach its saturation point more quickly.
The main advantages of the 2N3906RLRA is its low noise, which is due to the low voltage and high current capabilities of the device. It is also highly efficient, as its biasing method allows for less power consumption in order to gain the desired voltage gain. Additionally, its wide range of compatible devices makes it an ideal choice for a variety of applications.
In conclusion, the 2N3906RLRA is a type of bipolar junction transistor that is used for general switching and amplifier applications. This device operates using the biasing of the base region and the activation of the collector and emitter regions. It is able to provide low noise and high efficiency, due to its low voltage and current capabilities. Additionally, the wide range of compatible devices makes it a great choice for many different electronics projects.
The specific data is subject to PDF, and the above content is for reference
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