2N3955 Allicdata Electronics
Allicdata Part #:

2N3955-ND

Manufacturer Part#:

2N3955

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: THROUGH-HOLE TRANSISTOR-SMALL SI
More Detail: Bipolar (BJT) Transistor
DataSheet: 2N3955 datasheet2N3955 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Active
Description

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A 2N3955 is an NPN bipolar junction transistor (BJT) typically used for low power switching applications. It is a robust, medium power transistor with a range of uses. This makes it incredibly versatile and the go-to choice for many electronic devices.

Unlike MOSFETS, BJTs are 3-terminal devices, consisting of an emitter, collector, and base. The collector is the primary output point, and the emitter is the primary input point. The base is used to control the current flow between the emitter and collector. This current is controlled by a small input. Whenever the base receives a voltage of 0.7V, the transistor is \'turned on\', allowing current to flow from collector to emitter.

As well as low power switching applications, 2N3955s are versatile and are used in a variety of circuits. Most commonly, the 2N3955s is used for amplification. It can also be used for general-purpose switching, inverters, line drivers, Darlington transistors, and small signal switch for resistive loads.

In addition to the general-purpose amplifier applications, the 2N3955 can be used for RF amplifying. In RF applications, the 2N3955 can receive signals over a wide range of frequencies and amplify them to higher levels. This makes it ideal for use in radios and other RF-based communication devices.

In terms of current gain, the 2N3955 has medium to large gains of 50 to 200. This allows it to be used in a variety of different applications, both analogue and digital. The 2N3955 is also relatively easy to design for, meaning that it is especially suited for practical circuits requiring good performance.

The 2N3955 is also popular for its power efficiency, making it the go-to choice for most low power electronics. It can handle a maximum power rating of 375mW with a maximum collector-emitter voltage of 800mV. This can be further increased when paired with other components, allowing a wider range of applications.

Overall, the 2N3955 is an incredibly versatile and reliable transistor. Due to its low power requirements and medium to high current gain, it is the go-to choice for most low power electronic applications. With its robust design and wide applicability, the 2N3955 is an excellent choice for any electronics project.

The specific data is subject to PDF, and the above content is for reference

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