2N3906G Allicdata Electronics
Allicdata Part #:

2N3906GOS-ND

Manufacturer Part#:

2N3906G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 0.2A TO-92
More Detail: Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625m...
DataSheet: 2N3906G datasheet2N3906G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 625mW
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: 2N3906
Description

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Bipolar junction transistors, also known as BJTs, are a type of transistor that utilizes two junctions. One junction is between two P type materials and the other between two N type materials. Within these junctions, the current flow can be controlled by applying a voltage to the third lead, known as the base. 2N3906G is one specific type of BJT. This particular transistor belongs to a class of transistors known as single transistors, meaning that it only contains one BJT. It is suitable for many practical applications and works well for signal amplification and switching applications.

The 2N3906G comes in a number of variations based on the voltage signal range. Applying the correct voltage signal to the transistor\'s base determines how much current will flow through the other two leads, the collector and emitter. This characteristic of BJT transistors makes them very convenient for a variety of applications including signal amplification, relays, and inverters. This particular transistor is often used in wide-band amplifiers, amplifying large signals with small power.

In terms of output, the 2N3906G transistor can provide a maximum of 200mA of current, voltage up to 40V, and a frequency of up to 400MHz. It is important to note that these values can vary depending on the specifications of each transistor model. 2N3906G transistors also have a wide range of power dissipation ratings from 625mW to 1000mW, differing by model. These ratings represent the maximum amount of power that can be dissipated without damaging or destroying the device. Therefore, it is important to match the transistor\'s power ratings with the specific load requirements of an application.

In terms of their working principle, 2N3906G transistors act as a switch by controlling the current flow between the collector and the emitter leads. When a voltage is applied to the base, it creates a current flowing from the collector to the emitter. This current creates a voltage drop across the transistor that can be used to control other components in the circuit. The smaller the voltage applied to the base, the greater the current flowing from the collector to the emitter. Conversely, the greater the voltage applied to the base, the smaller the current flowing from the collector to the emitter. This can be used to adjust the voltage output of the circuit.

2N3906G transistors are widely used in a variety of applications, from low-frequency amplification to high-frequency switching. These transistors are generally used to control the current flow through a circuit and are a popular choice for many application fields, such as automotive, telecommunications, and consumer electronics. In addition, this type of transistor is also very widely used in research, as it provides a reliable platform for testing technologies.

The specific data is subject to PDF, and the above content is for reference

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