Allicdata Part #: | 2N3904CBU-ND |
Manufacturer Part#: |
2N3904CBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 625m... |
DataSheet: | 2N3904CBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N3904 |
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Bipolar junction transistors (BJT) are widely used to amplify signals. One type of BJT is the 2N3904CBU, a transistor intended for general purpose use. The 2N3904CBU is a low power NPN BJT, with applications ranging from switching and linear amplification functions, to providing current gain in voltage amplifiers.
The 2N3904CBU has an epitaxial layer of silicon deposited on an insulating substrate to create an N-channel and a P-channel perpendicular to each other. An emitter electrode is located at the center of each channel, with the collector electrode on the N-channel and the base electrode on the P-channel. This arrangement enables the transistor to work as a current gain element with a conduction threshold, or cut-off voltage, between the collector and emitter.
The 2N3904CBU’s working principle is often referred to as the “common-emitteramplifier”. In this configuration, the base-emitter junction acts as a voltage-controlled current source, allowing the transistor to amplify input signals applied to the base terminal. In other words, a small current entering the base-emitter junction causes a much larger current to flow between the collector and emitter.
One of the most common applications of the 2N3904CBU is as a general purpose switching device, as it can easily be implemented in circuit designs requiring transistors with high current gain and low leakage current. With its high current gain, the 2N3904CBU is capable of amplifying tiny signals, allowing very little energy to be consumed. The collector-to-emitter flowing current is directly proportional to the Input signal, making it an ideal choice for low frequency amplification.
The 2N3904CBU is also a great choice as a linear amplifier due to its low noise level. It is well suited for a wide spectrum of signal amplifications, such as audio, video, and wireless signals. Its high input impedance and low output impedance makes it ideal for short-range data transmissions.
The 2N3904CBU is also highly versatile. It can be used as the switching components of logic gates, and can be combined with other transistors to form further circuits, such as the Class B amplifier or the common emitter amplifier. As such, the 2N3904CBU is a highly versatile, adaptable, and practical component for many different applications.
In conclusion, the 2N3904CBU is a low power NPN BJT with numerous applications. Its working principle is based on the idea of the “common-emitter amplifier”, whereby a small current entering the base-emitter junction causes a much larger current to flow between the collector and emitter. The transistor is especially well suited for general purpose switching and linear amplification applications, as well as short-range data transmissions. This makes the 2N3904CBU a valuable general purpose transistor for many different applications.
The specific data is subject to PDF, and the above content is for reference
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