| Allicdata Part #: | 2N5550TARTB-ND |
| Manufacturer Part#: |
2N5550TAR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 140V 0.6A TO-92 |
| More Detail: | Bipolar (BJT) Transistor NPN 140V 600mA 300MHz 625... |
| DataSheet: |  2N5550TAR Datasheet/PDF |
| Quantity: | 16000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 600mA |
| Voltage - Collector Emitter Breakdown (Max): | 140V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10mA, 5V |
| Power - Max: | 625mW |
| Frequency - Transition: | 300MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | 2N5550 |
Description
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The 2N5550TAR is an NPN silicon transistor that produces amazing results, in a variety of performance scenarios. This is one of the most versatile and reliable transistors available today. It is a single, bipolar, junction transistor (BJT) designed for use primarily in the area of amplifier applications but is also suitable for use in numerous other applications.
The 2N5550TAR has many features that make it an ideal choice for a wide range of projects. It has a maximum collector emitter voltage of 75V and a maximum voltage gain of 25dB. It also has a very low supply current, making it very energy-efficient. In addition, it features reliable temperature stability and a robust design, making it extremely dependable.
This transistor’s application field is incredibly vast and varied. It is often found in automotive, audio, and industrial applications. In automotive applications, it is used for current sensing and amplifier stages. In audio applications, it can be used for various signal amplifications, such as preamps, line equalizers, and hi-fi power amplifiers. Additionally, it can be used in other AC and DC devices, such as digital and analog circuits, timers, and DC tachometers.
The working principle of the 2N5550TAR is extremely simple and efficient. When a current is applied to the base, the base-emitter junction is forward-biased, allowing electrons to flow from the emitter to the collector. The magnitude of the current and voltage gain are determined by the value of the current applied to the base. By contemporary standards, this transistor has a very low noise figure, making it ideal for applications where noise is of the utmost importance.
The 2N5550TAR is a reliable, energy-efficient and versatile choice for many electronic applications. It is incredibly easy to work with, thanks to its low noise figure and high-performance operation. With a wide range of applications and features, this single, bipolar, junction transistor is going to continue to be a dependable choice for all of your projects.
The specific data is subject to PDF, and the above content is for reference
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