2N5550RLRPG

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	140V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 10mA, 5V
Power - Max:	625mW
Frequency - Transition:	300MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	2N5550

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<div><h2>2N5550RLRPG Application Field and Working Principle</h2><p>The 2n5550RLRPG is a device belonging to a family of transistors referred to as bipolar junction transistors (BJTs) for their construction which uses both p and n type semiconductors to create what is known as a junction. This particular type of transistor is a single bipolar junction transistor, meaning that it contains a single junction. The 2n5550RLRPG can be found in many electrical appliances, computers, and even some small electronics.</p><p>The 2n5550RLRPG is an NPN type of transistor, meaning it has a three-layer base construction made of n-type material, a p-type material, and n-type material again. This arrangement allows current to flow from the collector (n-side) to the base (p-side) and from the base to the emitter (n-side).</p> <p>When considering the application field and some of the ways in which it can be used in different kinds of electrical devices, the 2n5550RLRPG can be used for switching, amplifying, and for the purpose of providing electrical protection. For example, the 2n5550RLRPG can be used in systems like switching regulators, amplifiers, and converter circuits. It can also be used as an overcurrent protection element in systems such as power supplies.</p><p>To further understand how the 2n5550RLRPG works, we can examine the principle behind its operation. The basic working principle of the transistor is based on the fact that the current flowing through the base (p layer) of the transistor will be amplified and, in turn, produce a higher current at the collector (n layer). This is due to the fact that the base current has a much greater flow of current than the collector current.</p> <p>When the base voltage is increased, the current flows through it increases, which at the same time increases the current at the collector. Since the collector is connected to an external circuit, this Increased current can be used to switch on the load connected to it. Similarly, when the base voltage is decreased, the current flowing through it decreases, thus decreasing the current flow at the collector. This decrease in current causes the load connected to it to be switched off.</p><p>The 2N5550RLRPG is a versatile device that can be used for many different applications, ranging from actuation systems, signal control systems, amplifier circuits, and even protection circuits. This device is optimized for voltage and current capability and offers greater reliability than many other transistors. With its versatility and reliability, the 2N5550RLRPG is an ideal choice for many different kinds of electrical components.</p></div>

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