2N5551CYTA

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N5551CYTA is a monolithic, silicon, NPN transistor in a TO92 package designed for general purpose switching and amplification. It features a low on-resistance, fast switching speed and a wide operating voltage range. The 2N5551CYTA is used in a variety of applications such as motor control circuits, audio amplifiers, digital to analog converters, power switching circuits and many more.

The 2N5551CYTA is a bipolar junction transistor (BJT), a type of electronic component consisting of three semiconductor layers, the base, collector and emitter. The structure of the BJT allows it to act as a current-controlled device, such that a small current applied to the base can control a much larger current flowing between the collector and emitter. This is achieved by the transistor\'s base region acting as a “gate” to control the amount of current passing through the emitter-collector path.

To understand how a BJT works, we must examine how electric current flows through it. Current flow starts at the emitter, which is connected to the power source. The current passes through the base, and then splits into two paths. In the first path, the current passes into the collector, which is the output terminal connected to the load. In the second path, current travels through the reverse biased junction between the collector and the base. This reverse biased junction increases the voltage at the collector terminal, causing current to be driven into the load.

The 2N5551CYTA is able to amplify and switch rapidly because of its low gate capacitance. Gate capacitance is the build-up of charge that occurs when a transistor is turned on, and the lower the gate capacitance of the transistor, the faster it can switch. The 2N5551CYTA has a gate capacitance of only 3.7 pF, which enables it to switch at frequencies up to 150 MHz.

The 2N5551CYTA is also designed to function in wide operating voltage range, from 2 volts (V) up to 34 V. This makes it suitable for a variety of applications such as controlling motors and amplifiers, as well as driving solenoid valves, relays, and other higher voltage devices. Other features of the 2N5551CYTA include a low on-resistance (2.2 Ω) and a maximum collector current of 800 mA.

In summary, the 2N5551CYTA is a low power, low gate capacitance, bipolar junction transistor (BJT), designed to provide fast switching and amplification in various applications. Its low on-resistance, wide operating voltage range, and fast switching speed allow it to be used in a wide range of applications, from audio amplifiers to digital to analog converters, to power switching circuits.

The specific data is subject to PDF, and the above content is for reference