2N5551_J61Z

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2N5551_J61Z, also known as which is a PNP type silicon transistor, belongs to the family of transistors known as Bipolar Junction Transistors (BJTs). BJTs are probably the most commonly used transistors in the world and are widely applied in consumer electronics, power electronic devices, communications devices, and other electronic components.

The 2N5551_J61Z is a single BJT that is primarily used in amplifying and switching applications. In general, BJTs have three terminals - the collector, the base, and the emitter. The collector terminal normally connects to the power source while the emitter. The base is the bridge between the collector and the emitter and is responsible for regulating current flow between them. BJTs are unipolar devices, meaning that they can handle both types of current, namely, the positive and the negative.

The 2N5551_J61Z is mainly used because it can provide both high currents and voltage gain at relatively low cost. In terms of its application field, the device is best suited for discrete circuit applications such as audio amplifiers, inverters, and DC-DC power converters. In terms of its working principle, the 2N5551_J61Z follows a classic BJT operation. The current from the collector terminal to the emitter is regulated by controlling the amount of current fed into the base terminal.

When applying voltage to the base terminal of the 2N5551_J61Z, current begins to flow between the base and the emitter (the base current). This current creates a minority-carrier inversion layer between the collector and the emitter, and allowing current to flow from the collector to the emitter (the collector current). As a result, the resistance value between the collector and the emitter is decreased, and therefore it will allow current to flow more freely between them.

The amount of current allowed to flow between the collector and the emitter can be controlled by adjusting the base current. This is why the base terminal of a BJT is referred to as the control terminal. By controlling the voltage applied to the base, the collector current can be adjusted, thus regulating the amount of current that can pass through the transistor.

Due to the fact that it can provide both high current and voltage gain, the 2N5551_J61Z is very useful for discrete circuit applications such as amplifiers and inverters. Additionally, its AEC-Q101-qualified molding process makes it highly reliable and robust, and therefore is suitable for automotive applications as well.

In conclusion, the 2N5551_J61Z is a PNP type silicon BJT that is used primarily for amplifying and switching applications. It can provide both high current and voltage gain, and is suitable for many applications such as discrete circuit amplifiers, inverters, and dc-dc power converters. Its AEC-Q101-qualified molding process ensures that the device is highly reliable and robust.

The specific data is subject to PDF, and the above content is for reference