Allicdata Part #: | 2N5551,116-ND |
Manufacturer Part#: |
2N5551,116 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 160V 0.3A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 160V 300mA 300MHz 630... |
DataSheet: | 2N5551,116 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Power - Max: | 630mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5551 |
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Transistors are a type of semiconductor devices that are used as switches and amplifiers in circuits. They have a three-terminal configuration and a varying current or voltage when triggered. Bipolar Junction Transistors (BJT) are one type of transistor. The single BJTs are those that are composed of two p-type and one n-type materials. One of the most commonly used single BJTs is the 2N5551,116.
The principle of operation of the 2N5551,116 is based on the movement of charge carriers. This transistor is composed of two p-type semiconductors, base and emitter, with an n-type semiconductor between them. When a bias is applied to the base, the electrons in the emitter move towards the base and holes move to the collector. This action creates a flow of current which is amplified in the collector.
The 2N5551,116 can be found in a range of applications, including amplifiers, regulated power supplies and oscillators. In amplifiers, it is used for signal amplification in audio applications. In regulated power supplies, it is used to regulate the output voltage and current of the device. In oscillators, it is used for signal generation by controlling the frequency and amplitude of the signal.
In addition to its range of uses, the 2N5551,116 is also used in lithium-ion battery system-protection circuits. This transistor is designed to detect any potential overcharging or over-discharging of the battery and shut it off to protect the system. This transistor also offers low operating current, low thermal resistance and low saturation voltage, making it an ideal choice for battery protection circuits.
The 2N5551,116 is also used as an oscillator in frequency synthesizers. This transistor acts as a switch in the circuit, controlling the frequency of the signal. It has a wide frequency range and a low input capacitance, making it suitable for use in a variety of applications.
The 2N5551,116 is a versatile transistor that can be used in a range of applications. It is suitable for use in amplifiers, oscillators, regulated power supplies, lithium-ion battery protection circuits and frequency synthesizers. Its high frequency range and low input capacitance make it an ideal choice for use in these types of applications.
The specific data is subject to PDF, and the above content is for reference
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