2N5551RLRP Allicdata Electronics
Allicdata Part #:

2N5551RLRP-ND

Manufacturer Part#:

2N5551RLRP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 160V 0.6A TO-92
More Detail: Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625...
DataSheet: 2N5551RLRP datasheet2N5551RLRP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5551
Description

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The 2N5551RLRP is a type of single bipolar junction transistor (BJT). It is highly popular in a wide range of applications including audio, general purpose switching and amplification, and testing of analog and digital circuits.

Its case style is "TO-220" which makes it ideal for mounting to heat sinks when used in power switching applications. It has a maximum collector current of 625mA, a peak collector-emitter voltage of 200 volts, and a minimum safe operating temperature of -55 degrees Celsius.

The normal configuration of a single BJT is an N-channel and P-channel junction. This acts as an amplifier, allowing a small current to control a larger one by creating a voltage drop between the base-collector and base-emitter junction. This is known as the gain of the transistor, and the 2N5551RLRP has a gain of 300 at most.

When the base-emitter junction is forward biased, holes from the P-type material combine with electrons from the N-type material and the BJT is "on". When the base-emitter junction is reversed biased, the holes and electrons are forced apart and the BJT is "off". This allows the transistor to act as a switch, which is the primary application of the 2N5551RLRP.

The 2N5551RLRP is also used as an amplifier due to its high current, voltage and frequency capabilities. When used as an amplifier, the transistor uses negative feedback, which decreases the gain of the circuit but increases the linearity and prevents runaway feedback. It also reduces unwanted oscillation due to the narrower bandwidth of the transistor.

The 2N5551RLRP is also used in pulse circuits. A pulse circuit typically uses a one-shot multivibrator, which is a circuit that changes state when triggered. The purpose of the one-shot multivibrator is to generate a single pulse, and the 2N5551RLRP is often used in this circuit because of its current and switching capabilities.

In conclusion, the 2N5551RLRP is a type of single bipolar junction transistor (BJT) that is highly popular due to its current, voltage and frequency capabilities. It is typically used in applications such as audio, general purpose switching and amplification, and testing of analog and digital circuits; as well as pulse circuits. Its case style is "TO-220", which makes it suitable for mounting to heat sinks when used in power switching applications. Its gain is typically 300 at most.

The specific data is subject to PDF, and the above content is for reference

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