2N5551CTA Allicdata Electronics
Allicdata Part #:

2N5551CTA-ND

Manufacturer Part#:

2N5551CTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 160V 0.6A TO-92
More Detail: Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 625...
DataSheet: 2N5551CTA datasheet2N5551CTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5551
Description

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Transistors - Bipolar (BJT) - Single

The 2N5551CTA is one of the most widely used transistors in the industry. It is a small signal type, medium power transistor and is usually used in power management and amplification circuits. Its performance is excellent and the price is relatively low, making it a perfect choice for applications where cost needs to be kept at a minimum. Furthermore, it is widely available, leading to its popularity in the industry.

2N5551CTA Application Field

The 2N5551CTA has a variety of application fields, and it can be used in most power management, switching and amplifier circuits. It is suitable for use in different kinds of audio amplification systems, motor control systems and power supply circuits. In addition, it is being used in low power RF amplifiers, RF switches, and oscillators in wireless communication systems.

2N5551CTA Working Principle

The 2N5551CTA is a bipolar transistor, and its operation depends upon the movement and interaction of minority carriers, which are electrons and holes in semiconductor material. It has 3 terminals; the emitter, collector, and base. The emitter and base are forward biased while the collector is reverse biased. The movement of majority carriers, which are holes and electrons, is restricted. The majority carriers can not cross the collector and base junction, which creates a depletion region at the collector-base junction.

In the 2N5551CTA the base to emitter junction is forward biased and the collector-base junction is reverse biased. Electrons in the emitter region are attracted to the positive terminal of the base-emitter junction and move to the base region. The electrons move through the depletion region and are collected by the reverse biased collector-base junction. The base current, which is a small fraction of the collector current, controls the collector current and is called a current amplification factor (beta).

The 2N5551CTA has a high current amplification factor and is used in complementary transistor circuits. It is also used in high power amplifiers and switching circuits. Therefore, it is an ideal choice for applications where cost needs to be kept at a minimum.

The specific data is subject to PDF, and the above content is for reference

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